AS4C128M8D3B-12BANTR

Product Overview

Category

AS4C128M8D3B-12BANTR belongs to the category of dynamic random-access memory (DRAM) modules.

Use

This product is primarily used in computer systems and electronic devices for storing and retrieving data quickly and efficiently.

Characteristics

• High-speed data access
• Large storage capacity
• Low power consumption
• Compact size
• Reliable performance

Package

AS4C128M8D3B-12BANTR is packaged in a small form factor, making it suitable for integration into various electronic devices.

Essence

The essence of AS4C128M8D3B-12BANTR lies in its ability to provide fast and reliable data storage and retrieval capabilities, enhancing the overall performance of electronic devices.

Packaging/Quantity

AS4C128M8D3B-12BANTR is typically available in bulk packaging, with quantities varying based on customer requirements.

Specifications

• Part Number: AS4C128M8D3B-12BANTR
• Memory Type: DDR3 SDRAM
• Capacity: 1GB
• Organization: 128M words x 8 bits
• Speed: 1200 MHz
• Voltage: 1.5V
• Operating Temperature: -40°C to +85°C
• Pin Count: 96 pins
• Package Type: FBGA (Fine-Pitch Ball Grid Array)

Detailed Pin Configuration

AS4C128M8D3B-12BANTR has a total of 96 pins arranged as follows:

• Pins 1-12: Address Inputs (A0-A11)
• Pins 13-36: Data Inputs/Outputs (DQ0-DQ23)
• Pins 37-42: Data Mask (DM0-DM3)
• Pins 43-46: Bank Select (BA0-BA2)
• Pins 47-48: Row Address Strobe (RAS#, RAS#)
• Pins 49-50: Column Address Strobe (CAS#, CAS#)
• Pins 51-52: Write Enable (WE#, WE#)
• Pins 53-54: Clock (CLK, CLK#)
• Pins 55-56: Chip Select (CS#, CS#)
• Pins 57-96: Power and Ground

Functional Features

• High-speed data transfer
• Burst mode operation
• Auto-refresh and self-refresh modes
• On-die termination (ODT) for improved signal integrity
• Low power consumption in standby mode
• Error correction code (ECC) support for data integrity

Advantages and Disadvantages

Advantages

• Fast data access speeds
• Large storage capacity
• Low power consumption
• Compact size
• Reliable performance
• ECC support for data integrity

Disadvantages

• Relatively higher cost compared to other memory technologies
• Limited compatibility with older systems

Working Principles

AS4C128M8D3B-12BANTR operates based on the principles of dynamic random-access memory. It stores data in capacitors within each memory cell, which must be periodically refreshed to maintain the stored information. The memory controller sends commands and addresses to access specific data stored in the memory cells.

Detailed Application Field Plans

AS4C128M8D3B-12BANTR is widely used in various applications, including: - Personal computers - Laptops - Servers - Networking equipment - Consumer electronics - Industrial automation systems

Detailed and Complete Alternative Models

Some alternative models to AS4C128M8D3B-12BANTR include: - AS4C128M8D3B-12BIN - AS4C128M8D3B-12BCN - AS4C128M8D3B-12BCNTR - AS4C128M8D3B-12BCN-T

These models offer similar specifications and functionality, providing flexibility in choosing the most suitable option for specific applications.

In conclusion, AS4C128M8D3B-12BANTR is a high-performance DDR3 SDRAM module that offers fast data access, large storage capacity, and low power consumption. Its compact size and reliable performance make it an ideal choice for various electronic devices and computer systems.