AS4C16M16D1-5BIN

Product Overview

Category

AS4C16M16D1-5BIN belongs to the category of semiconductor memory products.

Use

It is primarily used as a storage component in electronic devices such as computers, smartphones, and embedded systems.

Characteristics

• High-speed operation
• Large storage capacity
• Low power consumption
• Compact package size

Package

AS4C16M16D1-5BIN is available in a small outline dual in-line memory module (SODIMM) package.

Essence

The essence of AS4C16M16D1-5BIN lies in its ability to store and retrieve digital information quickly and efficiently.

Packaging/Quantity

AS4C16M16D1-5BIN is typically packaged individually and is available in various quantities depending on the manufacturer's specifications.

Specifications

• Memory Type: Synchronous Dynamic Random Access Memory (SDRAM)
• Organization: 16 Meg x 16 bits
• Operating Voltage: 3.3V
• Speed Grade: -5BIN
• Clock Frequency: Up to 166 MHz
• Data Rate: 333 MT/s
• Refresh Mode: Auto-refresh and self-refresh
• Interface: Parallel

Detailed Pin Configuration

The AS4C16M16D1-5BIN has a total of 60 pins. The pin configuration is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VSS
20. A0
21. A1
22. A2
23. A3
24. A4
25. A5
26. A6
27. A7
28. A8
29. A9
30. A10
31. A11
32. A12
33. A13
34. A14
35. A15
36. BA0
37. BA1
38. RAS#
39. CAS#
40. WE#
41. CS#
42. VDD
43. VSS
44. CLK
45. CKE
46. DQM0
47. DQM1
48. DQS0
49. DQS1
50. DM0
51. DM1
52. VREF
53. VSS
54. VDD
55. VSS
56. VDD
57. VSS
58. VDD
59. VSS
60. VDD

Functional Features

• High-speed data transfer
• Burst mode operation
• On-die termination (ODT) for improved signal integrity
• Auto and self-refresh modes for power-saving
• Error correction code (ECC) support for data integrity

Advantages and Disadvantages

Advantages

• Fast data access and retrieval
• Large storage capacity
• Low power consumption
• Compact form factor
• Support for error correction

Disadvantages

• Relatively higher cost compared to other memory technologies
• Limited scalability beyond a certain capacity

Working Principles

AS4C16M16D1-5BIN operates based on the principles of synchronous dynamic random access memory (SDRAM). It stores digital information in an array of capacitors, with each capacitor representing a single bit of data. The memory cells are organized in rows and columns, and data is accessed by specifying the row and column addresses.

The synchronous nature of SDRAM ensures that data transfers occur in synchronization with an external clock signal. This allows for high-speed operation and efficient utilization of the memory bandwidth.

Detailed Application Field Plans

AS4C16M16D1-5BIN finds applications in various electronic devices and systems, including: - Personal computers - Laptops and notebooks - Servers - Workstations - Networking equipment - Mobile phones and tablets - Automotive electronics - Industrial control systems - Medical devices

Detailed and Complete Alternative Models

Some alternative models to AS4C16M16D1-5BIN include: - AS4C32M16D1-5BIN - AS4C64M16D1-5BIN - AS4C128M16D1-5BIN - AS4C256M16D1-5BIN - AS4C512M16D1-5BIN

These alternative models offer different storage capacities while maintaining