AS4C256M8D3A-12BCN

Basic Information Overview

• Category: Integrated Circuit (IC)
• Use: Memory chip
• Characteristics:
  • High-density storage
  • Low power consumption
  • Fast data access
  • Reliable performance
• Package: BGA (Ball Grid Array)
• Essence: Non-volatile memory storage
• Packaging/Quantity: Typically sold in reels of 250 or 500 units

Specifications

• Part Number: AS4C256M8D3A-12BCN
• Organization: 256 Megabit (32 Megabyte) x 8
• Speed: 12 nanoseconds (ns)
• Voltage: 3.3 volts (V)
• Interface: Synchronous Dynamic Random Access Memory (SDRAM)
• Operating Temperature: -40°C to +85°C
• RoHS Compliance: Yes

Detailed Pin Configuration

The AS4C256M8D3A-12BCN has a total of 66 pins, which are arranged as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. /WE
12. /CAS
13. /RAS
14. /CS
15. A0
16. A1
17. A2
18. A3
19. A4
20. A5
21. A6
22. A7
23. A8
24. A9
25. A10
26. A11
27. A12
28. A13
29. A14
30. A15
31. A16
32. A17
33. A18
34. A19
35. A20
36. /BA0
37. /BA1
38. VDDQ
39. DQ8
40. DQ9
41. DQ10
42. DQ11
43. DQ12
44. DQ13
45. DQ14
46. DQ15
47. VSSQ
48. /CKE
49. /CS2
50. /CS3
51. /CS4
52. /CS5
53. /CS6
54. /CS7
55. /CLK
56. /CK
57. /DQM0
58. /DQM1
59. /DQM2
60. /DQM3
61. VREF
62. VSSR
63. NC
64. NC
65. NC
66. VDD

Functional Features

• High-speed data transfer
• Burst mode operation
• Auto-refresh and self-refresh modes
• On-die termination (ODT) for improved signal integrity
• Low-power standby mode
• Error correction code (ECC) support

Advantages and Disadvantages

Advantages: - High-density storage allows for large amounts of data to be stored in a compact chip. - Fast data access enables quick retrieval of information. - Low power consumption helps conserve energy and prolong battery life in portable devices. - Reliable performance ensures data integrity and system stability.

Disadvantages: - Limited storage capacity compared to other memory technologies like NAND flash. - Higher cost per unit compared to lower-capacity memory chips. - Sensitive to electrical noise and requires proper signal conditioning for optimal operation.

Working Principles

The AS4C256M8D3A-12BCN is based on synchronous dynamic random access memory (SDRAM) technology. It stores data in a volatile manner, meaning that the stored information is lost when power is removed. The chip operates by synchronizing data transfers with an external clock signal. When a read or write command is issued, the chip accesses the requested data from its internal memory cells and transfers it to or from the external system.

Detailed Application Field Plans

The AS4C256M8D3A-12BCN is commonly used in various electronic devices and systems, including: - Personal computers - Laptops and notebooks - Servers and workstations - Networking equipment - Consumer electronics (e.g., digital cameras, gaming consoles) - Industrial control systems

Detailed and Complete Alternative Models

• AS4C128M16D3A-12BCN: 128 Megabit x 16 SDRAM
• AS4C512M8D3A-12BCN: 512 Megabit x 8 SDRAM
• AS4C64M32D3A-12BCN: 64 Megabit x 32 SDRAM
• AS4C1G8