AS4C512M8D3A-12BANTR

Product Overview

Category

AS4C512M8D3A-12BANTR belongs to the category of dynamic random-access memory (DRAM) modules.

Use

This product is primarily used in computer systems and electronic devices for storing and retrieving data quickly and efficiently.

Characteristics

• High-speed data access
• Large storage capacity
• Low power consumption
• Compact form factor
• Reliable performance

Package

AS4C512M8D3A-12BANTR is packaged as a small module that can be easily integrated into various electronic devices. It is designed to fit standard memory slots found in computers and other compatible devices.

Essence

The essence of AS4C512M8D3A-12BANTR lies in its ability to provide fast and reliable data storage and retrieval, enhancing the overall performance of electronic devices.

Packaging/Quantity

AS4C512M8D3A-12BANTR is typically sold in individual units or in packs containing multiple modules, depending on the manufacturer's packaging specifications.

Specifications

• Model: AS4C512M8D3A-12BANTR
• Memory Type: Dynamic Random-Access Memory (DRAM)
• Capacity: 512 Megabits (64 Megabytes)
• Data Bus Width: 8 bits
• Operating Voltage: 1.5V
• Speed: 12 nanoseconds (NS)
• Organization: 512M x 8
• Interface: Parallel
• Package Type: Small Outline Dual In-Line Memory Module (SO-DIMM)

Detailed Pin Configuration

The AS4C512M8D3A-12BANTR module has the following pin configuration:

1. VDD - Power Supply
2. DQ0 - Data Input/Output Bit 0
3. DQ1 - Data Input/Output Bit 1
4. DQ2 - Data Input/Output Bit 2
5. DQ3 - Data Input/Output Bit 3
6. DQ4 - Data Input/Output Bit 4
7. DQ5 - Data Input/Output Bit 5
8. DQ6 - Data Input/Output Bit 6
9. DQ7 - Data Input/Output Bit 7
10. VSS - Ground
11. NC - No Connection
12. A0 - Address Bit 0
13. A1 - Address Bit 1
14. A2 - Address Bit 2
15. A3 - Address Bit 3
16. A4 - Address Bit 4
17. A5 - Address Bit 5
18. A6 - Address Bit 6
19. A7 - Address Bit 7
20. A8 - Address Bit 8
21. A9 - Address Bit 9
22. A10 - Address Bit 10
23. A11 - Address Bit 11
24. A12 - Address Bit 12
25. A13 - Address Bit 13
26. A14 - Address Bit 14
27. A15 - Address Bit 15
28. /RAS - Row Address Strobe
29. /CAS - Column Address Strobe
30. /WE - Write Enable
31. /CS - Chip Select
32. VDD - Power Supply

Functional Features

• High-speed data access: AS4C512M8D3A-12BANTR offers fast data transfer rates, allowing for quick retrieval and storage of information.
• Large storage capacity: With a capacity of 512 Megabits, this module can store a significant amount of data.
• Low power consumption: AS4C512M8D3A-12BANTR is designed to operate efficiently with low power requirements, contributing to energy savings.
• Compact form factor: The small outline dual in-line memory module (SO-DIMM) package ensures easy integration into various devices with limited space.
• Reliable performance: This module is built to deliver consistent and reliable performance, ensuring data integrity and system stability.

Advantages and Disadvantages

Advantages

• High-speed data access enhances overall system performance.
• Large storage capacity allows for the handling of extensive data requirements.
• Low power consumption contributes to energy efficiency.
• Compact form factor enables compatibility with space-constrained devices.
• Reliable performance ensures data integrity and system stability.

Disadvantages

• Limited compatibility with devices that do not support the SO-DIMM form factor.
• Higher cost compared to some other memory modules with lower specifications.

Working Principles

AS4C512M8D3A-12BANTR operates based on the principles of dynamic random-access memory. It stores data in capacitors within its memory cells, which need to