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IPD50R280CEBTMA1
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IPD50R280CEBTMA1

Product Overview

Category

The IPD50R280CEBTMA1 belongs to the category of power MOSFETs.

Use

It is used as a high-voltage switch in various electronic circuits and applications.

Characteristics

  • High voltage capability
  • Low on-resistance
  • Fast switching speed
  • Low gate charge
  • Avalanche energy specified

Package

The IPD50R280CEBTMA1 comes in a TO-252-3 package.

Essence

This MOSFET is essential for efficient power management and control in electronic devices and systems.

Packaging/Quantity

The IPD50R280CEBTMA1 is typically packaged in reels with a quantity of 2500 pieces per reel.

Specifications

  • Drain-Source Voltage (Vdss): 500V
  • Continuous Drain Current (Id): 4.2A
  • On-Resistance (Rds(on)max): 0.28Ω
  • Total Gate Charge (Qg): 22nC
  • Avalanche Energy (Eas): 160mJ

Detailed Pin Configuration

The IPD50R280CEBTMA1 has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • High voltage capability allows for use in various power applications.
  • Low on-resistance minimizes power loss and improves efficiency.
  • Fast switching speed enables rapid control of power flow.
  • Low gate charge facilitates quick and precise switching.

Advantages and Disadvantages

Advantages

  • High voltage capability suitable for diverse applications
  • Low on-resistance for improved efficiency
  • Fast switching speed for precise power control

Disadvantages

  • Higher cost compared to lower voltage MOSFETs
  • More complex drive circuitry required due to higher voltage rating

Working Principles

The IPD50R280CEBTMA1 operates based on the principles of field-effect transistors, utilizing its gate, drain, and source terminals to control the flow of current in high-voltage applications.

Detailed Application Field Plans

The IPD50R280CEBTMA1 is commonly used in: - Switching power supplies - Motor control circuits - Inverters - LED lighting systems - Industrial automation equipment

Detailed and Complete Alternative Models

Some alternative models to the IPD50R280CEBTMA1 include: - IPD50R280CE - Similar specifications and characteristics - IPD50R280CEBT - Slightly different packaging option - IPD50R280CEXK - Enhanced avalanche energy rating

In conclusion, the IPD50R280CEBTMA1 is a high-voltage power MOSFET with excellent characteristics and functional features, making it suitable for a wide range of power management applications.

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Maglista ng 10 karaniwang tanong at sagot na nauugnay sa aplikasyon ng IPD50R280CEBTMA1 sa mga teknikal na solusyon

  1. What is the maximum drain current of IPD50R280CEBTMA1?

    • The maximum drain current of IPD50R280CEBTMA1 is 120A.

  2. What is the typical on-state resistance of IPD50R280CEBTMA1?

    • The typical on-state resistance of IPD50R280CEBTMA1 is 0.028 ohms.

  3. What is the maximum power dissipation of IPD50R280CEBTMA1?

    • The maximum power dissipation of IPD50R280CEBTMA1 is 300W.

  4. What is the gate-source voltage of IPD50R280CEBTMA1?

    • The gate-source voltage of IPD50R280CEBTMA1 is ±20V.

  5. What are the typical applications for IPD50R280CEBTMA1?

    • IPD50R280CEBTMA1 is commonly used in motor control, high-frequency DC-DC converters, and synchronous rectification.

  6. What is the operating temperature range of IPD50R280CEBTMA1?

    • The operating temperature range of IPD50R280CEBTMA1 is -55°C to 150°C.

  7. Does IPD50R280CEBTMA1 have built-in protection features?

    • Yes, IPD50R280CEBTMA1 has built-in overcurrent protection and thermal shutdown features.

  8. What is the gate charge of IPD50R280CEBTMA1?

    • The gate charge of IPD50R280CEBTMA1 is typically 60nC.

  9. Is IPD50R280CEBTMA1 RoHS compliant?

    • Yes, IPD50R280CEBTMA1 is RoHS compliant.

  10. What package type does IPD50R280CEBTMA1 come in?

    • IPD50R280CEBTMA1 is available in a TO-252-3 (DPAK) package.