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IR2108S
Product Overview
Category: Integrated Circuit (IC)
Use: The IR2108S is a high voltage, high-speed power MOSFET and IGBT driver. It is specifically designed to drive power MOSFETs and IGBTs with high efficiency and reliability.
Characteristics: - High voltage capability - High speed switching - Low power consumption - Compact package size - Wide operating temperature range
Package: The IR2108S is available in a compact 8-pin SOIC (Small Outline Integrated Circuit) package.
Essence: The essence of the IR2108S lies in its ability to provide efficient and reliable driving of power MOSFETs and IGBTs, enabling high-performance power electronics applications.
Packaging/Quantity: The IR2108S is typically sold in reels or tubes containing a quantity of 250 units per package.
Specifications
- Supply Voltage: 10V - 20V
- Output Current: 200mA
- Operating Temperature Range: -40°C to +125°C
- Input Logic Levels: CMOS/TTL compatible
- Propagation Delay Time: 120ns (typical)
- Rise/Fall Time: 35ns (typical)
- Output Resistance: 1.5Ω (typical)
Pin Configuration
The IR2108S features the following pin configuration:
- Vb: Bootstrap supply voltage
- HO: High-side gate driver output
- LO: Low-side gate driver output
- Vs: High-side floating supply return
- COM: Ground reference for low-side driver
- VB: High-side floating supply voltage
- SD: Shutdown input
- VS: High-side floating supply return
Functional Features
- High voltage capability allows driving of power MOSFETs and IGBTs in various applications.
- High-speed switching enables efficient power conversion and reduces switching losses.
- Low power consumption ensures energy efficiency and minimizes heat dissipation.
- Compact package size facilitates space-saving designs.
- Wide operating temperature range allows reliable operation in harsh environments.
Advantages
- Efficient and reliable driving of power MOSFETs and IGBTs.
- High-speed switching for improved power conversion efficiency.
- Low power consumption for energy-efficient operation.
- Compact package size for space-saving designs.
- Wide operating temperature range for versatile application possibilities.
Disadvantages
- Limited output current capability (200mA).
- Requires external bootstrap capacitor for high-side gate drive.
- Not suitable for applications requiring higher output resistance.
Working Principles
The IR2108S operates by receiving input logic signals and generating corresponding gate drive signals to control the switching of power MOSFETs and IGBTs. It utilizes a bootstrap circuit to provide the necessary voltage levels for driving the high-side gate.
Application Field Plans
The IR2108S is widely used in various power electronics applications, including: - Motor drives - Switch-mode power supplies - Inverters - Uninterruptible power supplies (UPS) - Solar inverters - Electric vehicle charging systems
Alternative Models
Other alternative models that can be considered as replacements or substitutes for the IR2108S include: - IR2104 - IR2110 - IRS21844 - TC4427
These alternative models offer similar functionality and characteristics, providing flexibility in design choices.
In conclusion, the IR2108S is a high voltage, high-speed power MOSFET and IGBT driver with excellent performance and reliability. Its compact package, wide operating temperature range, and efficient driving capabilities make it a popular choice for various power electronics applications.
Maglista ng 10 karaniwang tanong at sagot na nauugnay sa aplikasyon ng IR2108S sa mga teknikal na solusyon
Sure! Here are 10 common questions and answers related to the application of IR2108S in technical solutions:
Q: What is the IR2108S? A: The IR2108S is a high voltage, high-speed power MOSFET and IGBT driver IC.
Q: What is the maximum supply voltage for the IR2108S? A: The maximum supply voltage for the IR2108S is typically 600V.
Q: Can the IR2108S be used with both MOSFETs and IGBTs? A: Yes, the IR2108S can be used as a driver for both MOSFETs and IGBTs.
Q: What is the maximum output current capability of the IR2108S? A: The maximum output current capability of the IR2108S is typically 210mA.
Q: How does the IR2108S provide protection against shoot-through currents? A: The IR2108S has built-in dead-time control to prevent shoot-through currents in half-bridge configurations.
Q: Can the IR2108S operate at high frequencies? A: Yes, the IR2108S is designed to operate at high frequencies, making it suitable for applications such as motor drives and switch-mode power supplies.
Q: Does the IR2108S have an undervoltage lockout feature? A: Yes, the IR2108S has an undervoltage lockout feature that ensures proper operation even at low supply voltages.
Q: What is the recommended operating temperature range for the IR2108S? A: The recommended operating temperature range for the IR2108S is typically -40°C to +125°C.
Q: Can the IR2108S be used in automotive applications? A: Yes, the IR2108S is suitable for automotive applications and meets the necessary standards and requirements.
Q: Are there any application notes or reference designs available for the IR2108S? A: Yes, International Rectifier (now Infineon Technologies) provides application notes and reference designs that can help with the implementation of the IR2108S in various technical solutions.
Please note that the answers provided here are general and may vary depending on specific datasheet specifications and application requirements.