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IR2113STR
Product Overview
Category: Integrated Circuit (IC)
Use: The IR2113STR is a high voltage, high-speed power MOSFET and IGBT driver IC. It is specifically designed to drive both the high-side and low-side switches in half-bridge and full-bridge configurations.
Characteristics: - High voltage capability - Fast switching speed - Low power consumption - Compact package size - Robust protection features
Package: SOIC-16
Essence: The IR2113STR is an essential component in power electronics applications where efficient and reliable switching of high-power devices is required.
Packaging/Quantity: The IR2113STR is typically sold in reels containing 2500 units.
Specifications
- Supply Voltage Range: 10V - 20V
- Output Current: ±2A
- Propagation Delay: 120ns
- Operating Temperature Range: -40°C to +125°C
Pin Configuration
The IR2113STR has a total of 16 pins arranged as follows:
```
| | | 1 2 3 | | | | 4 5 6 | | | | 7 8 9 | | | | 10 11 12 | | | | 13 14 15 | |_______________| ```
Pin Description: 1. VCC - Power supply voltage input 2. VB - Bootstrap supply voltage input for high-side gate driver 3. HO - High-side gate driver output 4. LO - Low-side gate driver output 5. VS - High-side floating supply return 6. COM - Common connection for bootstrap capacitor and high-side gate driver 7. SD - Shutdown input (active low) 8. VS - High-side floating supply return 9. HO - High-side gate driver output 10. LO - Low-side gate driver output 11. VB - Bootstrap supply voltage input for high-side gate driver 12. VCC - Power supply voltage input 13. GND - Ground reference 14. IN - Logic input 15. IN - Logic input 16. GND - Ground reference
Functional Features
- High voltage level shifting capability
- Integrated bootstrap diode for high-side gate drive
- Under-voltage lockout protection
- Over-current shutdown protection
- Short-circuit protection
- Cross-conduction prevention
Advantages and Disadvantages
Advantages: - Enables efficient and reliable switching of high-power devices - Compact package size allows for space-saving designs - Robust protection features enhance system reliability - Fast switching speed minimizes power losses
Disadvantages: - Requires external components for proper operation - Limited output current may not be suitable for extremely high-power applications
Working Principles
The IR2113STR operates by receiving logic inputs to control the high-side and low-side gate drivers. It utilizes a bootstrap capacitor to generate the necessary voltage for driving the high-side switch. The integrated protection features ensure safe operation by monitoring various parameters such as under-voltage, over-current, and short-circuit conditions.
Detailed Application Field Plans
The IR2113STR is widely used in various power electronics applications, including: - Motor drives - Switch-mode power supplies - Inverters - Uninterruptible power supplies (UPS) - Solar inverters - Electric vehicle charging systems
Alternative Models
- IR2110STR
- IR2104S
- IRS21844SPBF
- MCP1407-E/P
These alternative models offer similar functionality and can be considered as replacements for the IR2113STR in specific applications.
In conclusion, the IR2113STR is a high voltage, high-speed power MOSFET and IGBT driver IC. It offers efficient and reliable switching capabilities for various power electronics applications. With its compact size and robust protection features, it is a popular choice among designers in the field.
Maglista ng 10 karaniwang tanong at sagot na nauugnay sa aplikasyon ng IR2113STR sa mga teknikal na solusyon
Sure! Here are 10 common questions and answers related to the application of IR2113STR in technical solutions:
Q: What is IR2113STR? A: IR2113STR is a high voltage, high-speed power MOSFET and IGBT driver IC (integrated circuit) commonly used in motor control and power conversion applications.
Q: What is the maximum supply voltage for IR2113STR? A: The maximum supply voltage for IR2113STR is typically around 20V.
Q: Can IR2113STR drive both high-side and low-side MOSFETs or IGBTs? A: Yes, IR2113STR can drive both high-side and low-side MOSFETs or IGBTs, making it suitable for full-bridge or half-bridge configurations.
Q: What is the output current capability of IR2113STR? A: IR2113STR has a peak output current capability of up to 2A, which allows it to drive power devices with relatively high gate capacitance.
Q: Is IR2113STR compatible with TTL/CMOS logic levels? A: Yes, IR2113STR is compatible with both TTL (Transistor-Transistor Logic) and CMOS (Complementary Metal-Oxide-Semiconductor) logic levels, making it easy to interface with microcontrollers or other digital circuits.
Q: Does IR2113STR have built-in protection features? A: Yes, IR2113STR includes various protection features such as under-voltage lockout (UVLO), over-current protection (OCP), and shoot-through protection to prevent damage to the power devices.
Q: What is the typical operating frequency range for IR2113STR? A: The typical operating frequency range for IR2113STR is between a few kilohertz (kHz) to several megahertz (MHz), depending on the application and external components.
Q: Can IR2113STR be used in high-temperature environments? A: Yes, IR2113STR is designed to operate reliably in high-temperature environments and can handle temperatures up to 150°C.
Q: What is the recommended layout and decoupling guidelines for IR2113STR? A: The datasheet of IR2113STR provides detailed guidelines for layout and decoupling, including recommendations for minimizing noise and optimizing performance.
Q: Where can I find additional resources and application notes for IR2113STR? A: You can find additional resources, including datasheets, application notes, and reference designs, on the manufacturer's website or by contacting their technical support team.