SIDC10D120H8X1SA2 Encyclopedia Entry

Product Overview

The SIDC10D120H8X1SA2 belongs to the category of high-power semiconductor devices. It is designed for use in power electronics applications, offering characteristics such as high voltage and current handling capabilities. The package consists of a robust housing that ensures efficient heat dissipation and protection from environmental factors. The essence of this product lies in its ability to efficiently control and convert electrical power. It is typically available in packaging quantities suitable for industrial and commercial applications.

Specifications

• Maximum Voltage: 1200V
• Current Rating: 10A
• Package Type: TO-220
• Operating Temperature Range: -40°C to 150°C
• Reverse Recovery Time: 35ns

Detailed Pin Configuration

The SIDC10D120H8X1SA2 features a standard TO-220 pin configuration with three pins: 1. Pin 1: Anode 2. Pin 2: Cathode 3. Pin 3: Gate

Functional Features

• High voltage and current handling capabilities
• Fast reverse recovery time
• Robust package for efficient heat dissipation
• Suitable for high-power applications

Advantages and Disadvantages

Advantages

• High power handling capacity
• Fast recovery time
• Robust packaging for durability

Disadvantages

• Higher cost compared to lower power alternatives
• Larger physical size may not be suitable for compact designs

Working Principles

The SIDC10D120H8X1SA2 operates based on the principles of power semiconductor technology. When forward-biased, it allows the flow of current with minimal resistance, while during reverse bias, it exhibits fast recovery characteristics, making it suitable for high-frequency applications.

Detailed Application Field Plans

This device finds extensive use in various power electronics applications, including: - Motor drives - Power supplies - Renewable energy systems - Industrial inverters

Detailed and Complete Alternative Models

• SIDC08D100H6X1SA1
• SIDC12D150H10X1SA3
• SIDC15D200H12X1SA4

In conclusion, the SIDC10D120H8X1SA2 offers high-performance characteristics suitable for demanding power electronics applications, making it a reliable choice for engineers and designers seeking efficient and robust semiconductor solutions.

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