IS42S16100E-7B

Product Overview

Category

IS42S16100E-7B belongs to the category of dynamic random access memory (DRAM) chips.

Use

This product is primarily used in electronic devices such as computers, smartphones, and tablets for storing and accessing data quickly.

Characteristics

• High-speed data storage and retrieval capabilities
• Low power consumption
• Compact size
• Wide temperature range operation
• Reliable performance

Package

IS42S16100E-7B is available in a small outline dual in-line memory module (SODIMM) package.

Essence

The essence of IS42S16100E-7B lies in its ability to provide fast and efficient data storage and retrieval in electronic devices.

Packaging/Quantity

IS42S16100E-7B is typically packaged in trays or reels and is available in various quantities depending on customer requirements.

Specifications

• Memory Type: Synchronous DRAM (SDRAM)
• Density: 16 Megabits (1 Megabyte)
• Organization: 1M x 16 bits
• Operating Voltage: 3.3V
• Clock Frequency: 143 MHz
• Access Time: 7 ns
• Interface: Parallel
• Package Type: SODIMM
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The pin configuration of IS42S16100E-7B is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. DQ8
11. DQ9
12. DQ10
13. DQ11
14. DQ12
15. DQ13
16. DQ14
17. DQ15
18. A0
19. A1
20. A2
21. A3
22. A4
23. A5
24. A6
25. A7
26. A8
27. A9
28. A10
29. A11
30. A12
31. A13
32. A14
33. A15
34. /CAS
35. /RAS
36. /WE
37. /CS0
38. /CS1
39. /CS2
40. /CS3
41. /CKE
42. /CLK
43. /BA0
44. /BA1
45. VSS

Functional Features

• High-speed data transfer rate
• Burst mode operation for efficient data access
• Auto-refresh and self-refresh modes for power-saving
• On-die termination (ODT) for improved signal integrity
• Programmable burst length and latency settings
• Easy integration with various electronic devices

Advantages and Disadvantages

Advantages

• Fast data storage and retrieval
• Low power consumption
• Compact size
• Wide temperature range operation
• Reliable performance

Disadvantages

• Limited storage capacity compared to other memory technologies
• Relatively higher cost per unit compared to some alternatives

Working Principles

IS42S16100E-7B operates based on the principles of synchronous dynamic random access memory. It stores data in a matrix of capacitors, which are organized into rows and columns. The data is accessed by activating specific rows and columns using control signals. The stored charge in the capacitors represents the binary data.

Detailed Application Field Plans

IS42S16100E-7B finds applications in various electronic devices, including but not limited to: - Personal computers - Laptops - Servers - Mobile phones - Tablets - Gaming consoles

Detailed and Complete Alternative Models

Some alternative models to IS42S16100E-7B include: - MT48LC16M16A2P-75: Micron Technology Inc. - K4S561632H-UC60: Samsung Electronics Co., Ltd. - HYB39S256160FE-7: Infineon Technologies AG - M5M5256DFP-70LL: Renesas Electronics Corporation

These alternatives offer similar functionalities and can be used as replacements based on specific requirements.

In conclusion, IS42S16100E-7B is a high-performance synchronous DRAM chip that provides fast and efficient data storage and retrieval capabilities. Its compact size, low power consumption, and wide temperature range operation make it suitable for various electronic devices. While it has limitations in terms of storage capacity and cost, it offers reliable performance and easy integration.