IS42S16100E-7BI

Product Overview

Category

IS42S16100E-7BI belongs to the category of dynamic random access memory (DRAM) chips.

Use

This product is commonly used in electronic devices such as computers, smartphones, and tablets for storing and accessing data quickly.

Characteristics

• High-speed data storage and retrieval capabilities
• Low power consumption
• Compact size
• Compatibility with various electronic devices

Package

IS42S16100E-7BI is typically available in a small outline dual in-line memory module (SODIMM) package.

Essence

The essence of IS42S16100E-7BI lies in its ability to provide fast and efficient data storage and retrieval in electronic devices.

Packaging/Quantity

IS42S16100E-7BI is usually packaged in trays or reels, with each tray or reel containing a specific quantity of chips.

Specifications

• Memory Type: Synchronous DRAM (SDRAM)
• Capacity: 16 Megabits (2 Megabytes)
• Organization: 1M x 16 bits
• Operating Voltage: 3.3V
• Speed Grade: -7B (133 MHz)
• Interface: Parallel
• Pin Count: 54 pins
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The pin configuration of IS42S16100E-7BI is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VSS
20. A0
21. A1
22. A2
23. A3
24. A4
25. A5
26. A6
27. A7
28. A8
29. A9
30. A10
31. A11
32. A12
33. A13
34. A14
35. A15
36. /CAS
37. /RAS
38. /WE
39. /CS0
40. /CS1
41. /CS2
42. /CS3
43. /CS4
44. /CS5
45. /CS6
46. /CS7
47. /CKE
48. /CLK
49. /DQM0
50. /DQM1
51. VCC
52. VCC
53. VCC
54. VSS

Functional Features

• High-speed data transfer rate
• Burst mode operation for efficient data access
• Auto-refresh and self-refresh modes for power-saving
• On-die termination (ODT) for improved signal integrity
• Programmable burst length and latency settings

Advantages and Disadvantages

Advantages

• Fast data storage and retrieval
• Low power consumption
• Compact size
• Compatibility with various electronic devices
• Efficient burst mode operation

Disadvantages

• Limited capacity compared to other memory types
• Relatively higher cost per unit compared to some alternatives

Working Principles

IS42S16100E-7BI operates based on the principles of synchronous dynamic random access memory. It stores data in a matrix of capacitors, with each capacitor representing a bit of information. The data is accessed by sending specific commands and addresses to the memory chip, which activates the appropriate row and column to read or write data.

Detailed Application Field Plans

IS42S16100E-7BI finds applications in a wide range of electronic devices, including but not limited to: - Personal computers - Laptops - Servers - Mobile phones - Tablets - Gaming consoles - Networking equipment

Detailed and Complete Alternative Models

Some alternative models to IS42S16100E-7BI include: - MT48LC16M16A2P-75 (Micron Technology) - K4S561632H-UC60 (Samsung Electronics) - HYB39S256160FE-7 (Infineon Technologies) - M5M5256DFP-70LL (Renesas Electronics)

These alternatives offer similar specifications and functionalities, providing options for different design requirements.

In conclusion, IS42S16100E-7BI is a high-speed synchronous DRAM chip with a capacity of 16 Megabits. It offers fast data storage and retrieval capabilities, low power consumption, and compatibility with various electronic