IS42S16160G-6BL-TR

Product Overview

Category

IS42S16160G-6BL-TR belongs to the category of dynamic random access memory (DRAM) modules.

Use

This product is primarily used in computer systems and electronic devices for storing and retrieving data quickly and efficiently.

Characteristics

• High-speed data access
• Large storage capacity
• Low power consumption
• Compact size
• Reliable performance

Package

IS42S16160G-6BL-TR is available in a small outline, dual in-line memory module (SO-DIMM) package.

Essence

The essence of IS42S16160G-6BL-TR lies in its ability to provide fast and reliable data storage and retrieval in various electronic devices.

Packaging/Quantity

IS42S16160G-6BL-TR is typically packaged in trays or reels, with each tray/reel containing a specific quantity of modules. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: Synchronous DRAM (SDRAM)
• Capacity: 16 Megabytes (MB)
• Organization: 1M words x 16 bits
• Speed: 6 nanoseconds (ns)
• Voltage: 3.3 volts (V)
• Interface: Parallel
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The pin configuration of IS42S16160G-6BL-TR is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VSS
20. A0
21. A1
22. A2
23. A3
24. A4
25. A5
26. A6
27. A7
28. A8
29. A9
30. A10
31. A11
32. A12
33. A13
34. A14
35. A15
36. /CAS
37. /RAS
38. /WE
39. /CS0
40. /CS1
41. /CS2
42. /CS3
43. /CKE
44. /CLK
45. /DQM0
46. /DQM1
47. VDD
48. VSS

Functional Features

• Random access to data
• High-speed data transfer
• Refresh cycle for maintaining data integrity
• Low power standby mode
• Burst mode operation for efficient data retrieval

Advantages and Disadvantages

Advantages

• Fast data access and transfer speeds
• Large storage capacity
• Low power consumption
• Compact size for easy integration into electronic devices
• Reliable performance in various operating conditions

Disadvantages

• Relatively higher cost compared to other memory technologies
• Limited scalability beyond a certain capacity
• Susceptible to data loss in case of power failure without proper backup mechanisms

Working Principles

IS42S16160G-6BL-TR operates based on the principles of synchronous dynamic random access memory (SDRAM). It stores data in a matrix of capacitors, with each capacitor representing a single bit of information. The data is accessed by sending specific commands and addresses to the memory module, which activates the appropriate capacitors and retrieves the stored data.

Detailed Application Field Plans

IS42S16160G-6BL-TR finds applications in various electronic devices and systems, including: - Personal computers - Laptops and notebooks - Servers - Networking equipment - Mobile devices - Industrial control systems - Automotive electronics

Detailed and Complete Alternative Models

Some alternative models to IS42S16160G-6BL-TR include: - MT48LC16M16A2P-75: Micron Technology Inc. - K4S561632H-UC75: Samsung Electronics Co., Ltd. - HYB39S256160FE-7: Infineon Technologies AG - M5M5256DFP-70LL: Renesas Electronics Corporation - AS4C16M16SA-6TCN: Alliance Memory Inc.

These alternative models offer similar specifications and functionalities, providing options for different design requirements and compatibility with various systems.

In conclusion, IS42S16160G-6BL-TR is a high-performance DRAM module that offers fast data access,