IS42S32200E-6BI

Product Overview

Category

IS42S32200E-6BI belongs to the category of dynamic random access memory (DRAM) modules.

Use

It is primarily used as a memory component in various electronic devices such as computers, smartphones, tablets, and other digital devices.

Characteristics

• High-speed data storage and retrieval capabilities
• Volatile memory that requires constant power supply
• Offers large storage capacity
• Supports fast read and write operations
• Compact size for easy integration into electronic devices

Package

IS42S32200E-6BI comes in a small form factor package, making it suitable for space-constrained applications.

Essence

The essence of IS42S32200E-6BI lies in its ability to store and retrieve data quickly, providing efficient memory management for electronic devices.

Packaging/Quantity

IS42S32200E-6BI is typically packaged in trays or reels, with each package containing a specific quantity of memory modules. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: Synchronous DRAM (SDRAM)
• Organization: 32M words x 32 bits
• Operating Voltage: 3.3V
• Clock Frequency: Up to 166 MHz
• Access Time: 6 ns
• Interface: Parallel
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The pin configuration of IS42S32200E-6BI is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. DQ8
11. DQ9
12. DQ10
13. DQ11
14. DQ12
15. DQ13
16. DQ14
17. DQ15
18. A0
19. A1
20. A2
21. A3
22. A4
23. A5
24. A6
25. A7
26. A8
27. A9
28. A10
29. A11
30. A12
31. A13
32. A14
33. A15
34. /CAS
35. /RAS
36. /WE
37. /CS
38. /CKE
39. /BA0
40. /BA1
41. VSS

Functional Features

• High-speed data transfer rate for efficient memory operations
• Burst mode support for faster consecutive data access
• Auto-refresh and self-refresh modes for power-saving capabilities
• On-die termination (ODT) for improved signal integrity
• Programmable burst length and latency settings for customization

Advantages and Disadvantages

Advantages

• Fast data transfer rate enhances overall system performance
• Large storage capacity accommodates extensive data requirements
• Compact size allows for easy integration into various electronic devices
• Power-saving features contribute to energy efficiency

Disadvantages

• Volatile memory requires constant power supply, leading to data loss in case of power failure
• Relatively higher cost compared to other types of memory

Working Principles

IS42S32200E-6BI operates based on the principles of synchronous dynamic random access memory. It stores data in a matrix of capacitors, with each capacitor representing a single bit of information. The memory cells are organized in rows and columns, allowing for efficient read and write operations. The memory controller synchronizes the data transfer between the memory module and the processor, ensuring accurate and timely access to stored information.

Detailed Application Field Plans

IS42S32200E-6BI finds applications in various fields, including:

1. Personal Computers (PCs)
2. Laptops and Notebooks
3. Servers and Data Centers
4. Mobile Devices (Smartphones, Tablets)
5. Gaming Consoles
6. Networking Equipment
7. Automotive Electronics
8. Industrial Control Systems
9. Medical Devices
10. Consumer Electronics

Detailed and Complete Alternative Models

1. IS42S16160D-7TLI: 16M words x 16 bits SDRAM module with a clock frequency of up to 143 MHz.
2. IS45S16400J-7TLA1: 16M words x 4 bits SDRAM module with a clock frequency of up to 143 MHz.
3. IS43TR16256AL-125KBLI: 16M words x 32 bits SDRAM module with a clock frequency of up to 125 MHz.
4. IS46DR16320B-25DBLI: 16M