IS43DR16160B-25DBLI-TR

Basic Information Overview

Category: Integrated Circuit (IC)

Use: Memory device

Characteristics: - High-speed operation - Low power consumption - Large storage capacity - Compact package size

Package: Ball Grid Array (BGA)

Essence: This IC is a high-performance memory device used in various electronic applications.

Packaging/Quantity: Available in reels, with a quantity of 2500 units per reel.

Specifications

• Part Number: IS43DR16160B-25DBLI-TR
• Memory Type: Synchronous DRAM (SDRAM)
• Organization: 16M words x 16 bits
• Operating Voltage: 2.5V
• Clock Frequency: Up to 400 MHz
• Access Time: 5.4 ns
• Interface: Double Data Rate (DDR)
• Package Type: 96-ball BGA
• Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The IS43DR16160B-25DBLI-TR has a total of 96 pins arranged in a ball grid array configuration. The pinout diagram and functions are as follows:

| Pin No. | Pin Name | Function | |---------|----------|----------| | 1 | VDD | Power supply voltage | | 2 | VDDQ | Power supply voltage for I/O buffers | | 3 | DQ0 | Data input/output bit 0 | | 4 | DQ1 | Data input/output bit 1 | | ... | ... | ... | | 94 | DQ14 | Data input/output bit 14 | | 95 | DQ15 | Data input/output bit 15 | | 96 | VSS | Ground |

Functional Features

• High-speed data transfer with a clock frequency of up to 400 MHz
• Double Data Rate (DDR) interface for improved efficiency
• Low power consumption, making it suitable for battery-powered devices
• Large storage capacity of 16M words x 16 bits
• Reliable operation in a wide temperature range (-40°C to +85°C)

Advantages and Disadvantages

Advantages: - High-speed operation enables faster data processing - Low power consumption prolongs battery life - Compact package size saves board space - Large storage capacity accommodates extensive data requirements

Disadvantages: - Limited compatibility with older memory interfaces - Higher cost compared to lower-capacity memory devices

Working Principles

The IS43DR16160B-25DBLI-TR is based on Synchronous Dynamic Random Access Memory (SDRAM) technology. It utilizes a clock signal to synchronize data transfers between the memory device and the host system. The DDR interface allows data to be transferred on both the rising and falling edges of the clock signal, effectively doubling the data transfer rate.

When the host system requires data from the memory, it sends a read command along with the desired memory address. The memory device retrieves the requested data and sends it back to the host system. Similarly, when the host system needs to write data to the memory, it sends a write command along with the data to be stored at the specified memory address.

Detailed Application Field Plans

The IS43DR16160B-25DBLI-TR is widely used in various electronic applications that require high-speed and large-capacity memory. Some common application fields include:

1. Computer Systems:

   • Desktop computers
   • Laptops
   • Servers

2. Consumer Electronics:

   • Smartphones
   • Tablets
   • Gaming consoles

3. Networking Equipment:

   • Routers
   • Switches
   • Network storage devices

4. Automotive Electronics:

   • Infotainment systems
   • Advanced driver-assistance systems (ADAS)
   • Telematics

5. Industrial Control Systems:

   • Programmable logic controllers (PLCs)
   • Human-machine interfaces (HMIs)
   • Robotics

Detailed and Complete Alternative Models

1. IS43DR16128B-25DBLI-TR: 8M words x 16 bits SDRAM, same specifications as IS43DR16160B-25DBLI-TR but with half the storage capacity.
2. IS43DR32320B-25DBLI-TR: 32M words x 16 bits SDRAM, higher storage capacity than IS43DR16160B-25DBLI-TR.
3. IS43DR64640B-25DBLI-TR: 64M words x 16 bits SDRAM, double the storage capacity of IS43DR16160B-25DBLI-TR.

These alternative models provide options with different storage capacities to suit