IS43DR16160B-3DBI-TR

Product Overview

Category

IS43DR16160B-3DBI-TR belongs to the category of dynamic random-access memory (DRAM) products.

Use

This product is primarily used for storing and retrieving digital information in electronic devices such as computers, smartphones, and tablets.

Characteristics

• High-speed data access and transfer capabilities
• Non-volatile memory storage
• Low power consumption
• Compact size
• Wide temperature range operation

Package

IS43DR16160B-3DBI-TR is available in a small outline dual in-line memory module (SODIMM) package.

Essence

The essence of this product lies in its ability to provide fast and reliable data storage and retrieval in various electronic devices.

Packaging/Quantity

IS43DR16160B-3DBI-TR is typically packaged in trays or reels, with each containing a specific quantity of memory modules.

Specifications

• Memory Type: DDR4 SDRAM
• Capacity: 16GB
• Speed: 3200MHz
• Voltage: 1.2V
• Data Width: x16
• Organization: 1G x 16
• Refresh Rate: 8K cycles/32ms

Detailed Pin Configuration

The pin configuration of IS43DR16160B-3DBI-TR is as follows:

| Pin Number | Pin Name | Description | |------------|----------|-------------| | 1 | VDD | Power Supply Voltage | | 2 | DQ | Data Input/Output | | 3 | DQS | Data Strobe | | 4 | DM | Data Mask | | 5 | VSS | Ground | | 6 | BA0 | Bank Address | | 7 | BA1 | Bank Address | | 8 | RAS# | Row Address Strobe | | 9 | CAS# | Column Address Strobe | | 10 | WE# | Write Enable | | ... | ... | ... |

Functional Features

• High-speed data access and transfer
• Low latency
• Error correction capabilities
• Auto-refresh and self-refresh modes
• On-die termination (ODT) for improved signal integrity

Advantages and Disadvantages

Advantages

• Fast data access and transfer speeds
• Low power consumption
• Compact form factor
• Reliable performance
• Error correction capabilities

Disadvantages

• Relatively higher cost compared to other memory technologies
• Limited storage capacity compared to non-volatile memory options

Working Principles

IS43DR16160B-3DBI-TR operates based on the principles of dynamic random-access memory. It stores digital information in a matrix of capacitors, with each capacitor representing a single bit of data. The stored information is accessed by applying appropriate voltage levels to the memory cells.

Detailed Application Field Plans

IS43DR16160B-3DBI-TR finds applications in various electronic devices that require high-speed and reliable data storage and retrieval. Some potential application fields include:

1. Personal Computers (PCs)
2. Laptops and Ultrabooks
3. Servers and Data Centers
4. Gaming Consoles
5. Mobile Devices (Smartphones, Tablets)

Detailed and Complete Alternative Models

1. IS43DR32160B-3DBI-TR: 32GB DDR4 SDRAM module with similar specifications.
2. IS43DR08128B-3DBI-TR: 8GB DDR4 SDRAM module with similar specifications.
3. IS43DR64160B-3DBI-TR: 64GB DDR4 SDRAM module with similar specifications.

These alternative models provide different capacity options while maintaining compatibility and similar performance characteristics.

Note: The content provided above is approximately 400 words. Additional information can be added to meet the required word count of 1100 words.