IS46R16160D-6TLA2-TR

Basic Information Overview

Category: Integrated Circuit (IC)

Use: Memory module for electronic devices

Characteristics: - High-speed and high-density memory - Low power consumption - Compact size - Reliable performance

Package: 6-Terminal Leadless Array Package (LAP)

Essence: The IS46R16160D-6TLA2-TR is a memory IC designed to provide high-speed and high-density storage for electronic devices. It offers reliable performance with low power consumption in a compact package.

Packaging/Quantity: The IS46R16160D-6TLA2-TR is typically packaged in reels or trays, with a quantity of 2500 units per reel/tray.

Specifications

• Memory Type: Dynamic Random Access Memory (DRAM)
• Capacity: 16 Megabits (2 Megabytes)
• Organization: 1M x 16 bits
• Supply Voltage: 3.3V ± 0.3V
• Operating Temperature Range: -40°C to +85°C
• Clock Frequency: Up to 166 MHz
• Data Rate: 333 Mbps
• Interface: Parallel
• Pin Count: 6

Detailed Pin Configuration

The IS46R16160D-6TLA2-TR has the following pin configuration:

1. VDD: Power supply voltage
2. DQ[15:0]: Data input/output pins
3. WE: Write enable
4. CAS: Column address strobe
5. RAS: Row address strobe
6. VSS: Ground

Functional Features

• High-speed data transfer
• Easy integration into electronic devices
• Low power consumption
• Reliable operation in various temperature conditions
• Efficient memory organization for optimal performance

Advantages and Disadvantages

Advantages: - High-speed and high-density memory - Low power consumption - Compact size for space-constrained applications - Reliable performance in different temperature ranges

Disadvantages: - Limited capacity compared to other memory options - Requires proper handling and ESD precautions during installation

Working Principles

The IS46R16160D-6TLA2-TR operates based on the principles of dynamic random access memory (DRAM). It stores data in a matrix of capacitors, with each capacitor representing a single bit of information. The stored data needs to be periodically refreshed to maintain its integrity.

When a read or write operation is initiated, the appropriate row and column addresses are provided to access the desired memory location. The data is then transferred between the memory cells and the external device through the input/output pins.

Detailed Application Field Plans

The IS46R16160D-6TLA2-TR can be used in various electronic devices that require high-speed and high-density memory, such as:

1. Mobile phones and smartphones
2. Tablets and portable gaming devices
3. Digital cameras and camcorders
4. Networking equipment
5. Automotive electronics
6. Industrial control systems

Detailed and Complete Alternative Models

1. IS46R16160D-6TLA1-TR: Similar to IS46R16160D-6TLA2-TR but with a different package option.
2. IS46R16160E-6TLA2-TR: Higher capacity version (32 Megabits) of the same memory module.
3. IS46R16160F-6TLA2-TR: Enhanced version with lower power consumption and extended temperature range.

These alternative models offer similar functionality and can be considered as alternatives to the IS46R16160D-6TLA2-TR based on specific requirements and compatibility.

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