IS61DDB21M36-250M3L

Product Overview

Category

IS61DDB21M36-250M3L belongs to the category of integrated circuits (ICs).

Use

This product is commonly used in electronic devices for data storage and retrieval.

Characteristics

• High-speed performance
• Low power consumption
• Compact size
• Reliable operation

Package

IS61DDB21M36-250M3L is available in a small form factor package, suitable for surface mount technology (SMT) applications.

Essence

The essence of IS61DDB21M36-250M3L lies in its ability to provide efficient and reliable data storage and retrieval capabilities in electronic devices.

Packaging/Quantity

IS61DDB21M36-250M3L is typically packaged in reels or trays, with a quantity of [insert quantity].

Specifications

• Memory Type: Dynamic Random Access Memory (DRAM)
• Capacity: 2 Gb (Gigabits)
• Organization: 256M x 8
• Voltage Supply: 2.5V
• Speed: 250 MHz
• Interface: Parallel
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The pin configuration of IS61DDB21M36-250M3L is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. /WE
11. /CAS
12. /RAS
13. /CS
14. /OE
15. A0
16. A1
17. A2
18. A3
19. A4
20. A5
21. A6
22. A7
23. A8
24. A9
25. A10
26. A11
27. A12
28. A13
29. A14
30. A15
31. /BA0
32. /BA1
33. /CKE
34. /CLK
35. /CS2
36. /CS3
37. VSS

Functional Features

• High-speed data access and retrieval
• Low power consumption for energy efficiency
• Reliable operation in various temperature conditions
• Parallel interface for easy integration with other components

Advantages and Disadvantages

Advantages

• High-speed performance enables quick data processing
• Low power consumption prolongs battery life in portable devices
• Compact size allows for space-efficient designs
• Reliable operation ensures data integrity

Disadvantages

• Limited capacity compared to other memory technologies
• Requires refresh cycles to maintain data integrity
• Sensitive to electrical noise and interference

Working Principles

IS61DDB21M36-250M3L operates based on the principles of dynamic random access memory (DRAM). It stores data as charge in capacitors within its memory cells. To read or write data, specific control signals are applied to the appropriate pins, enabling the transfer of data between the memory and the connected device.

Detailed Application Field Plans

IS61DDB21M36-250M3L finds applications in various electronic devices, including but not limited to: - Personal computers - Laptops - Servers - Networking equipment - Mobile devices - Consumer electronics

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to IS61DDB21M36-250M3L include: - IS61DDB21M36-200M3L - IS61DDB21M36-300M3L - IS61DDB21M36-250M3I - IS61DDB21M36-250M3T

These alternative models may have variations in specifications, package types, or other features, but they serve the same purpose of providing high-speed and reliable data storage capabilities.

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