IS61QDB41M36-250M3

Basic Information Overview

• Category: Integrated Circuit (IC)
• Use: Memory module
• Characteristics:
  • High-speed performance
  • Low power consumption
  • Compact size
• Package: BGA (Ball Grid Array)
• Essence: Dynamic Random Access Memory (DRAM)
• Packaging/Quantity: Single unit

Specifications

• Model: IS61QDB41M36-250M3
• Capacity: 1 Gigabit (1 Gb)
• Organization: 4 banks x 4,194,304 words x 36 bits
• Operating Voltage: 2.5V ±0.2V
• Clock Frequency: 250 MHz
• Access Time: 5.4 ns (max)
• Refresh: Auto-refresh and self-refresh modes
• Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The IS61QDB41M36-250M3 has a total of 144 pins. The pin configuration is as follows:

| Pin Number | Pin Name | Description | |------------|----------|-------------| | 1 | VDD | Power supply voltage | | 2 | VSS | Ground | | 3-6 | A0-A3 | Address inputs | | 7-10 | BA0-BA3 | Bank address inputs | | 11-46 | DQ0-DQ35 | Data input/output | | 47 | DQM0 | Data mask for byte 0 | | 48 | DQM1 | Data mask for byte 1 | | ... | ... | ... | | 139-142 | NC | No connection | | 143 | VREF | Reference voltage | | 144 | VDDQ | Power supply voltage for I/O |

Functional Features

• High-speed data transfer
• Low power consumption
• Auto-refresh and self-refresh modes for efficient memory management
• Error correction capabilities
• On-die termination (ODT) for improved signal integrity

Advantages and Disadvantages

Advantages

• High-speed performance allows for faster data processing
• Low power consumption helps conserve energy
• Compact size enables integration into space-constrained systems
• Error correction capabilities enhance data reliability

Disadvantages

• Limited capacity compared to other memory modules
• Relatively higher cost per unit compared to some alternatives

Working Principles

The IS61QDB41M36-250M3 is based on dynamic random access memory (DRAM) technology. It stores data in a matrix of capacitors, with each capacitor representing a single bit of information. The stored data needs to be periodically refreshed to maintain its integrity. When the memory module receives a read or write command, it accesses the specific memory location using the provided address inputs and transfers the data through the data input/output pins.

Detailed Application Field Plans

The IS61QDB41M36-250M3 memory module is commonly used in various applications that require high-speed and reliable data storage. Some of the typical application fields include: - Computer systems - Networking equipment - Telecommunications devices - Industrial control systems - Automotive electronics

Detailed and Complete Alternative Models

• IS61QDP41M36-250M3: Similar specifications but with double data rate (DDR) support
• IS61QDB42M18-250M3: Higher capacity variant with 2 Gigabit (2 Gb) capacity
• IS61QDB41M36-200M3: Lower clock frequency variant for power-sensitive applications

(Note: This list is not exhaustive and there may be other alternative models available in the market.)

This entry provides an overview of the IS61QDB41M36-250M3 memory module, including its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.