IS62WV6416ALL-55BLI-TR

Product Overview

Category

IS62WV6416ALL-55BLI-TR belongs to the category of semiconductor memory devices.

Use

This product is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and embedded systems.

Characteristics

• High-speed operation
• Low power consumption
• Non-volatile memory
• Large storage capacity
• Reliable performance

Package

IS62WV6416ALL-55BLI-TR is available in a compact package that ensures easy integration into various electronic devices. The package type is typically surface mount technology (SMT).

Essence

The essence of IS62WV6416ALL-55BLI-TR lies in its ability to store and retrieve digital information quickly and reliably, making it an essential component in modern electronic devices.

Packaging/Quantity

IS62WV6416ALL-55BLI-TR is usually packaged in reels or trays, depending on the manufacturer's specifications. The quantity per package may vary, but it is commonly available in bulk quantities suitable for large-scale production.

Specifications

• Memory Type: Static Random Access Memory (SRAM)
• Organization: 64K words x 16 bits
• Operating Voltage: 3.3V
• Access Time: 55ns
• Interface: Parallel
• Operating Temperature Range: -40°C to +85°C
• Package Type: 48-ball FBGA

Detailed Pin Configuration

The pin configuration of IS62WV6416ALL-55BLI-TR is as follows:

1. VCC
2. A0-A15
3. DQ0-DQ15
4. /WE
5. /OE
6. /UB/LB
7. /CE1
8. /CE2
9. /CE3
10. /CE4
11. /CE5
12. /CE6
13. /CE7
14. /CE8
15. /CE9
16. /CE10
17. /CE11
18. /CE12
19. /CE13
20. /CE14
21. /CE15
22. /CE16
23. /CE17
24. /CE18
25. /CE19
26. /CE20
27. /CE21
28. /CE22
29. /CE23
30. /CE24
31. /CE25
32. /CE26
33. /CE27
34. /CE28
35. /CE29
36. /CE30
37. /CE31
38. /CE32
39. /CE33
40. /CE34
41. /CE35
42. /CE36
43. /CE37
44. /CE38
45. /CE39
46. /CE40
47. /CE41
48. GND

Functional Features

• High-speed data access
• Low power consumption in standby mode
• Easy integration into various electronic devices
• Reliable performance in harsh operating conditions
• Compatibility with standard parallel interfaces

Advantages and Disadvantages

Advantages

• Fast data access speed enhances overall system performance.
• Low power consumption helps prolong battery life in portable devices.
• Non-volatile memory ensures data retention even during power loss.
• Large storage capacity accommodates complex applications.
• Reliable performance in extreme temperature conditions.

Disadvantages

• Higher cost compared to other memory technologies.
• Limited scalability beyond the specified storage capacity.
• Susceptible to electromagnetic interference (EMI) due to parallel interface.

Working Principles

IS62WV6416ALL-55BLI-TR operates based on the principles of static random access memory (SRAM). It stores data in a volatile manner, meaning that the stored information is lost when power is removed. The memory cells within the device are organized into a matrix, allowing for simultaneous access to multiple data locations. The parallel interface enables fast read and write operations, making it suitable for applications requiring high-speed data transfer.

Detailed Application Field Plans

IS62WV6416ALL-55BLI-TR finds application in various electronic devices and systems, including but not limited to: - Computers and servers - Networking equipment - Telecommunications devices - Automotive electronics - Industrial control systems - Medical devices - Consumer electronics

Detailed and Complete Alternative Models

1. IS62WV6416BLL-55BLI-TR
2. IS62WV6416CLL-55BLI-TR
3. IS62WV6416DLL-55BLI-TR
4. IS62WV6416ELL-55BLI-TR