Category: Power MOSFET
Use: High power switching applications
Characteristics: High voltage, high current capability
Package: TO-268
Essence: Power semiconductor device
Packaging/Quantity: Tape and reel, 500 units per reel
The IXFN400N15X3 features a TO-268 package with the following pin configuration: 1. Gate (G) 2. Drain (D) 3. Source (S)
Advantages: - High voltage and current capability - Low on-state resistance - Fast switching speed
Disadvantages: - Higher cost compared to lower power MOSFETs - Requires careful handling due to high voltage ratings
The IXFN400N15X3 operates based on the principles of field-effect transistors, utilizing the control of an electric field to modulate the conductivity of the device.
This MOSFET is suitable for a wide range of high-power applications including: - Motor drives - Power supplies - Renewable energy systems - Electric vehicles - Industrial equipment
Note: The alternative models listed above are indicative and may vary based on specific requirements.
This completes the English editing encyclopedia entry structure for IXFN400N15X3.
What is the maximum voltage rating of IXFN400N15X3?
What is the maximum current rating of IXFN400N15X3?
What type of package does IXFN400N15X3 come in?
What are the typical applications for IXFN400N15X3?
What is the on-state resistance of IXFN400N15X3?
Does IXFN400N15X3 require a heat sink for operation?
What is the maximum junction temperature for IXFN400N15X3?
Is IXFN400N15X3 suitable for high-frequency switching applications?
Can IXFN400N15X3 be used in parallel to handle higher currents?
What are the key advantages of using IXFN400N15X3 in technical solutions?