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IXKC13N80C

IXKC13N80C

Product Overview

  • Category: Power MOSFET
  • Use: Switching applications in power supplies, motor control, and other high voltage applications
  • Characteristics: High voltage capability, low on-resistance, fast switching speed
  • Package: TO-220AB
  • Essence: Power MOSFET for high voltage applications
  • Packaging/Quantity: Available in reels or tubes, quantity varies by manufacturer

Specifications

  • Voltage Rating: 800V
  • Current Rating: 13A
  • On-Resistance: 0.8Ω
  • Gate Threshold Voltage: 2.5V
  • Maximum Operating Temperature: 150°C

Detailed Pin Configuration

  • Pin 1 (G): Gate
  • Pin 2 (D): Drain
  • Pin 3 (S): Source

Functional Features

  • High voltage capability suitable for various applications
  • Low on-resistance minimizes power loss
  • Fast switching speed for efficient operation

Advantages and Disadvantages

  • Advantages:
    • Suitable for high voltage applications
    • Low on-resistance
    • Fast switching speed
  • Disadvantages:
    • Higher cost compared to lower voltage MOSFETs
    • Requires careful handling due to high voltage rating

Working Principles

The IXKC13N80C operates based on the principles of field-effect transistors, utilizing the gate voltage to control the flow of current between the drain and source terminals. When a sufficient gate voltage is applied, the MOSFET allows current to pass through, enabling its use in various switching applications.

Detailed Application Field Plans

The IXKC13N80C is commonly used in: - Power supply units - Motor control systems - High voltage inverters - Industrial automation equipment

Detailed and Complete Alternative Models

  • Alternative Model 1: IXFK13N80X
    • Similar specifications and package
    • May have different voltage or current ratings
  • Alternative Model 2: IRF840
    • Lower voltage rating but similar characteristics
    • Different package type (TO-220)

This comprehensive entry provides an in-depth understanding of the IXKC13N80C Power MOSFET, including its specifications, functional features, application fields, and alternative models, making it a valuable resource for engineers and enthusiasts in the field of power electronics.