MX29GL128FDXGI-11G

Product Overview

Category

MX29GL128FDXGI-11G belongs to the category of flash memory chips.

Use

This product is primarily used for data storage in electronic devices such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

• High storage capacity: MX29GL128FDXGI-11G offers a storage capacity of 128 gigabits.
• Fast data transfer rate: It provides high-speed read and write operations, allowing for quick access to stored data.
• Reliable performance: This flash memory chip ensures data integrity and durability, making it suitable for long-term storage.
• Low power consumption: MX29GL128FDXGI-11G is designed to consume minimal power, extending the battery life of devices.

Package and Quantity

MX29GL128FDXGI-11G is available in a compact package that measures 14mm x 18mm. It is typically sold in quantities of 100 units per package.

Specifications

• Storage Capacity: 128 gigabits
• Interface: Parallel
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Transfer Rate: Up to 50 megabytes per second (MB/s)
• Erase/Program Cycles: 100,000 cycles

Pin Configuration

The MX29GL128FDXGI-11G flash memory chip has a total of 48 pins. The pin configuration is as follows:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. A16
19. A17
20. A18
21. A19
22. A20
23. A21
24. A22
25. A23
26. A24
27. A25
28. A26
29. A27
30. A28
31. A29
32. A30
33. A31
34. DQ0
35. DQ1
36. DQ2
37. DQ3
38. DQ4
39. DQ5
40. DQ6
41. DQ7
42. WE#
43. CE#
44. OE#
45. BYTE#
46. RY/BY#
47. RESET#
48. VSS

Functional Features

• Block Erase: MX29GL128FDXGI-11G supports block erase operations, allowing for efficient removal of data.
• Page Program: It enables fast and reliable programming of data at the page level.
• Read Operation: This flash memory chip provides high-speed read access to stored data.
• Write Protection: MX29GL128FDXGI-11G offers write protection features to prevent accidental modification or deletion of data.

Advantages and Disadvantages

Advantages

• High storage capacity allows for ample data storage.
• Fast data transfer rate ensures quick access to stored information.
• Low power consumption prolongs device battery life.
• Reliable performance ensures data integrity and durability.

Disadvantages

• Limited erase/program cycles may affect the lifespan of the chip.
• The parallel interface may not be compatible with all devices.

Working Principles

MX29GL128FDXGI-11G utilizes a floating-gate transistor technology to store data. It uses electrical charges to trap electrons in the floating gate, representing binary information (0s and 1s). These trapped charges can be read, programmed, or erased using specific voltage levels applied to the chip's pins.

Detailed Application Field Plans

MX29GL128FDXGI-11G is widely used in various electronic devices that require high-capacity data storage. Some of its common application fields include: - Smartphones and tablets - Digital cameras - Portable media players - Solid-state drives (SSDs) - Industrial control systems

Alternative Models

Here are some alternative models that offer similar functionality to MX29GL128FDXGI-11G: - Samsung K9F1G08U0D - Toshiba TC58NVG2S0HRAIJ - Micron MT29F1G08ABADAWP

These alternative models provide comparable storage capacity and features, making them suitable replacements for MX29GL128FDXGI-11G in various applications.

In conclusion, MX29GL128FDXGI-11G is a flash memory chip that offers high storage capacity, fast