M29F160FT5AN6F2 TR

Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics:
  • Non-volatile memory
  • High-density storage
  • Fast read and write operations
  • Low power consumption
• Package: TSSOP (Thin Shrink Small Outline Package)
• Essence: Reliable and efficient data storage solution
• Packaging/Quantity: Available in reels with a quantity of 2500 units per reel

Specifications

• Memory Type: NOR Flash
• Memory Size: 16 Megabits (2 Megabytes)
• Organization: 2M x 8 bits
• Supply Voltage: 2.7V to 3.6V
• Operating Temperature Range: -40°C to +85°C
• Access Time: 70 ns (max)
• Erase/Program Time: 10 ms (typical)
• Endurance: 100,000 erase/write cycles (minimum)

Pin Configuration

The M29F160FT5AN6F2 TR has the following pin configuration:

1. A0
2. A1
3. A2
4. A3
5. A4
6. A5
7. A6
8. A7
9. VSS (Ground)
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. VCC (Power)
19. DQ0
20. DQ1
21. DQ2
22. DQ3
23. DQ4
24. DQ5
25. DQ6
26. DQ7
27. WE# (Write Enable)
28. CE# (Chip Enable)
29. OE# (Output Enable)
30. RP# (Reset/Protection)
31. NC (No Connection)
32. VSS (Ground)

Functional Features

• High-speed read and write operations
• Sector erase capability for efficient data management
• Built-in hardware and software protection mechanisms
• Automatic program and erase algorithms
• Low power consumption in standby mode
• Reliable data retention over a long period of time

Advantages

• High-density storage capacity
• Fast access times
• Low power consumption
• Durable and reliable
• Easy to integrate into electronic devices
• Cost-effective solution for data storage needs

Disadvantages

• Limited endurance compared to other memory technologies
• Higher cost per bit compared to some alternative memory options
• Requires additional circuitry for proper interfacing with the host system

Working Principles

The M29F160FT5AN6F2 TR is based on NOR Flash memory technology. It utilizes a grid of floating-gate transistors to store data. The memory cells are organized in a matrix, allowing for simultaneous access to multiple bits. When data is written, an electrical charge is trapped in the floating gate, altering the transistor's behavior and storing the desired information. Reading the data involves applying appropriate voltages to the memory cells and sensing the resulting current flow.

Detailed Application Field Plans

The M29F160FT5AN6F2 TR is widely used in various electronic devices that require non-volatile data storage. Some common application fields include:

1. Consumer Electronics:

   • Smartphones
   • Tablets
   • Digital cameras
   • Portable media players

2. Automotive Systems:

   • Infotainment systems
   • Instrument clusters
   • Engine control units

3. Industrial Equipment:

   • Programmable logic controllers (PLCs)
   • Human-machine interfaces (HMIs)
   • Data loggers

4. Communication Devices:

   • Routers
   • Modems
   • Network switches

Detailed and Complete Alternative Models

1. M29F160FB5AN6E2 TR
2. M29F160BB5AN6F2 TR
3. M29F160DT5AN6F2 TR
4. M29F160CB5AN6E2 TR
5. M29F160AT5AN6F2 TR

These alternative models offer similar specifications and functionality, providing flexibility in choosing the most suitable flash memory solution for specific applications.

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