MT28F320J3BS-11 MET

Product Overview

Category

MT28F320J3BS-11 MET belongs to the category of non-volatile memory devices.

Use

This product is primarily used for data storage in various electronic devices such as computers, smartphones, and embedded systems.

Characteristics

• Non-volatile: The data stored in MT28F320J3BS-11 MET is retained even when power is turned off.
• High capacity: This device has a storage capacity of 320 megabits (40 megabytes).
• Fast access time: It offers quick read and write operations, ensuring efficient data transfer.
• Reliable: MT28F320J3BS-11 MET has a high endurance and can withstand multiple read and write cycles without data corruption.
• Low power consumption: It operates at low power levels, making it suitable for battery-powered devices.

Package

MT28F320J3BS-11 MET is available in a compact surface-mount package.

Essence

The essence of this product lies in its ability to provide reliable and high-capacity non-volatile memory storage for electronic devices.

Packaging/Quantity

MT28F320J3BS-11 MET is typically packaged in reels or trays, with a quantity of 250 units per reel/tray.

Specifications

• Memory Type: Flash
• Organization: 4M x 8
• Supply Voltage: 2.7V - 3.6V
• Access Time: 90 ns
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel
• Package Type: TSOP

Detailed Pin Configuration

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. A16
19. A17
20. A18
21. A19
22. A20
23. A21
24. A22
25. A23
26. A24
27. A25
28. A26
29. A27
30. A28
31. A29
32. A30
33. A31
34. DQ0
35. DQ1
36. DQ2
37. DQ3
38. DQ4
39. DQ5
40. DQ6
41. DQ7
42. WE#
43. CE#
44. RE#
45. WP#
46. BYTE#
47. VSS
48. VSS

Functional Features

• Erase and Program Operations: MT28F320J3BS-11 MET supports both sector erase and byte program operations, allowing flexible data manipulation.
• Block Locking: Certain sectors can be locked to prevent accidental modification or erasure of critical data.
• Read and Write Protection: The device offers hardware-based protection features to safeguard stored data from unauthorized access.
• Error Correction Code (ECC): Built-in ECC ensures data integrity by detecting and correcting errors during read operations.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast access time
• Low power consumption
• Reliable operation
• Flexible erase and program operations

Disadvantages

• Limited endurance compared to other non-volatile memory technologies
• Relatively higher cost per bit compared to some alternatives

Working Principles

MT28F320J3BS-11 MET is based on flash memory technology. It utilizes floating-gate transistors to store data as electrical charges. The presence or absence of charge in the floating gate determines the stored data value (0 or 1). During read operations, the charges are sensed and converted into digital data. Erase and program operations involve applying specific voltage levels to modify the charge state of the floating gates.

Detailed Application Field Plans

MT28F320J3BS-11 MET finds applications in various electronic devices, including: - Personal computers - Laptops - Smartphones - Tablets - Digital cameras - Gaming consoles - Industrial control systems - Automotive electronics

Detailed and Complete Alternative Models

1. MT28F320J3BS-12 MET
2. MT28F320J3BS-10 MET
3. MT28F320J3BS-15 MET
4. MT28F320J3BS-20 MET
5. MT28F320J3BS-25 MET

These alternative models offer similar functionality and characteristics but may differ in terms of access time, temperature range, or package type.

*Note: The