Micron Technology Inc.
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MT28F400B3SG-8 T TR
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MT28F400B3SG-8 T TR

Product Overview

Category

MT28F400B3SG-8 T TR belongs to the category of Flash Memory.

Use

This product is primarily used for data storage in various electronic devices, such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

  • High storage capacity
  • Fast read and write speeds
  • Low power consumption
  • Durable and reliable
  • Compact size

Package

MT28F400B3SG-8 T TR is available in a small form factor package, making it suitable for integration into compact electronic devices.

Essence

The essence of this product lies in its ability to store and retrieve digital information quickly and efficiently.

Packaging/Quantity

MT28F400B3SG-8 T TR is typically packaged in reels or trays, with each reel or tray containing a specific quantity of flash memory chips. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

  • Storage Capacity: 4GB
  • Interface: Parallel
  • Voltage Range: 2.7V - 3.6V
  • Operating Temperature: -40°C to +85°C
  • Data Retention: Up to 10 years
  • Erase/Program Cycles: Up to 100,000 cycles

Detailed Pin Configuration

The pin configuration of MT28F400B3SG-8 T TR is as follows:

  1. VCC - Power supply voltage
  2. A0-A18 - Address inputs
  3. DQ0-DQ15 - Data inputs/outputs
  4. WE# - Write enable
  5. CE# - Chip enable
  6. OE# - Output enable
  7. RE# - Read enable
  8. WP# - Write protect
  9. RY/BY# - Ready/busy status
  10. VSS - Ground

Functional Features

  • High-speed data transfer
  • Reliable data storage and retrieval
  • Built-in error correction mechanisms
  • Support for various memory management techniques
  • Compatibility with different operating systems and file systems

Advantages and Disadvantages

Advantages

  • Large storage capacity
  • Fast read and write speeds
  • Low power consumption
  • Compact size
  • Long data retention period

Disadvantages

  • Limited erase/program cycles
  • Relatively higher cost compared to other storage technologies

Working Principles

MT28F400B3SG-8 T TR utilizes a floating gate transistor technology, where digital information is stored as electrical charges in the floating gate. These charges can be trapped or released to represent binary data (0s and 1s). The state of each memory cell can be changed through a process called programming, and the stored data can be read by applying appropriate voltages.

Detailed Application Field Plans

MT28F400B3SG-8 T TR finds applications in various electronic devices and systems, including: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Embedded systems - Automotive electronics - Industrial control systems

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to MT28F400B3SG-8 T TR include: - Samsung K9F4G08U0D - Micron MT29F4G08ABADAWP - Toshiba TC58NVG2S0HTA00

These alternative models have comparable specifications and are widely used in the industry.

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Maglista ng 10 karaniwang tanong at sagot na nauugnay sa aplikasyon ng MT28F400B3SG-8 T TR sa mga teknikal na solusyon

Sure! Here are 10 common questions and answers related to the application of MT28F400B3SG-8 T TR in technical solutions:

  1. Question: What is the maximum capacity of the MT28F400B3SG-8 T TR?
    Answer: The MT28F400B3SG-8 T TR has a maximum capacity of 4 megabits (512 kilobytes).

  2. Question: What is the operating voltage range for this memory device?
    Answer: The operating voltage range for the MT28F400B3SG-8 T TR is typically between 2.7V and 3.6V.

  3. Question: Can I use this memory device in industrial applications?
    Answer: Yes, the MT28F400B3SG-8 T TR is suitable for use in industrial applications due to its wide operating temperature range and reliability.

  4. Question: Does this memory device support random access?
    Answer: Yes, the MT28F400B3SG-8 T TR supports random access, allowing for efficient read and write operations.

  5. Question: What is the speed rating of this memory device?
    Answer: The MT28F400B3SG-8 T TR has a speed rating of 8ns, meaning it can perform operations at a speed of 125 MHz.

  6. Question: Can I use this memory device in battery-powered devices?
    Answer: Yes, the MT28F400B3SG-8 T TR is designed to be power-efficient, making it suitable for use in battery-powered devices.

  7. Question: Is this memory device compatible with standard microcontrollers?
    Answer: Yes, the MT28F400B3SG-8 T TR is compatible with standard microcontrollers that support the appropriate interface (e.g., parallel or serial).

  8. Question: Can I use this memory device for code storage in embedded systems?
    Answer: Yes, the MT28F400B3SG-8 T TR can be used for code storage in embedded systems, providing non-volatile storage for program instructions.

  9. Question: Does this memory device support hardware data protection features?
    Answer: Yes, the MT28F400B3SG-8 T TR supports hardware data protection features such as write protection and block locking to prevent unauthorized access or modification.

  10. Question: What is the expected lifespan of this memory device?
    Answer: The MT28F400B3SG-8 T TR has a typical endurance of 100,000 program/erase cycles, ensuring reliable performance over an extended period of time.

Please note that these answers are based on general information about the MT28F400B3SG-8 T TR and may vary depending on specific application requirements.