MT28F400B3WG-8 TET TR

Product Overview

Category

MT28F400B3WG-8 TET TR belongs to the category of Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

• High-speed read and write operations
• Non-volatile memory
• Low power consumption
• Compact size
• Durable and reliable

Package

MT28F400B3WG-8 TET TR is available in a small form factor package, making it suitable for integration into compact electronic devices.

Essence

The essence of this product lies in its ability to store and retrieve data quickly and reliably, providing a crucial component for the functioning of electronic devices.

Packaging/Quantity

MT28F400B3WG-8 TET TR is typically packaged in reels or trays, with each package containing a specific quantity of flash memory chips. The exact packaging and quantity may vary depending on the manufacturer.

Specifications

• Memory Type: NAND Flash
• Capacity: 4GB
• Interface: Parallel
• Voltage Range: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Speed: 8ns (Max)

Detailed Pin Configuration

1. VCC - Power supply voltage
2. GND - Ground
3. A0-A18 - Address inputs
4. CE - Chip enable
5. WE - Write enable
6. RE - Read enable
7. CLE - Command latch enable
8. ALE - Address latch enable
9. WP - Write protect
10. RY/BY# - Ready/Busy status
11. DQ0-DQ15 - Data input/output

Functional Features

• High-speed data transfer
• Block erase and program operations
• Error correction code (ECC) support
• Wear-leveling algorithms for extended lifespan
• Bad block management

Advantages

• Fast read and write speeds enhance overall device performance
• Low power consumption prolongs battery life
• Compact size allows for integration into small electronic devices
• Durable and reliable, ensuring data integrity
• Support for ECC improves data accuracy

Disadvantages

• Limited capacity compared to other storage options
• Relatively higher cost per gigabyte compared to traditional hard drives

Working Principles

MT28F400B3WG-8 TET TR utilizes NAND flash memory technology. It stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the voltage levels applied to it. The data is accessed by sending specific commands and addresses to the flash memory chip.

Detailed Application Field Plans

MT28F400B3WG-8 TET TR finds applications in various electronic devices that require non-volatile storage, including: - Smartphones and tablets - Digital cameras - Portable media players - Solid-state drives (SSDs) - Industrial control systems

Detailed and Complete Alternative Models

1. MT29F4G08ABAEAWP-IT: 4GB NAND Flash Memory, Parallel Interface, 8ns Speed.
2. S34ML04G200TFI000: 4GB NAND Flash Memory, Parallel Interface, 8ns Speed.
3. K9F4G08U0D-SCB0: 4GB NAND Flash Memory, Parallel Interface, 8ns Speed.

These alternative models offer similar specifications and functionality to MT28F400B3WG-8 TET TR, providing options for different sourcing requirements.

In conclusion, MT28F400B3WG-8 TET TR is a high-speed NAND flash memory chip with a capacity of 4GB. It offers fast data transfer, low power consumption, and compact size, making it suitable for various electronic devices. While it has limitations in terms of capacity and cost, its reliability and performance advantages make it a popular choice in the industry.