MT28F400B5SG-8 TET

Product Overview

Category

MT28F400B5SG-8 TET belongs to the category of Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

• Non-volatile memory: The stored data is retained even when power is removed.
• High-speed read and write operations: Allows for quick access to stored data.
• Large storage capacity: The MT28F400B5SG-8 TET offers a total capacity of 4 gigabits (512 megabytes).
• Reliable performance: Designed to withstand harsh environmental conditions and provide long-term data retention.

Package

The MT28F400B5SG-8 TET is available in a compact and durable package that ensures protection during handling and installation.

Essence

The essence of this product lies in its ability to store and retrieve digital information reliably and efficiently.

Packaging/Quantity

The MT28F400B5SG-8 TET is typically packaged in trays or reels, depending on the quantity ordered. The exact packaging quantity may vary based on customer requirements.

Specifications

• Memory Type: NAND Flash
• Organization: 512M x 8 bits
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel
• Access Time: 70 ns
• Erase/Program Cycles: 100,000 cycles

Detailed Pin Configuration

The MT28F400B5SG-8 TET has the following pin configuration:

1. VCC - Power supply voltage
2. GND - Ground
3. A0-A19 - Address inputs
4. DQ0-DQ7 - Data inputs/outputs
5. WE# - Write enable
6. CE# - Chip enable
7. OE# - Output enable
8. RE# - Read enable
9. WP# - Write protect
10. RY/BY# - Ready/Busy status

Functional Features

• Block Erase: Allows for erasing large blocks of data simultaneously, improving efficiency.
• Page Program: Enables fast programming of individual memory pages.
• Read and Write Protection: Provides security by allowing the protection of specific memory regions from unauthorized access.
• Bad Block Management: Automatically detects and manages bad blocks to ensure data integrity.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast read and write operations
• Reliable performance in extreme conditions
• Efficient block erase and page program functions

Disadvantages

• Limited number of erase/program cycles
• Relatively high power consumption during operation

Working Principles

The MT28F400B5SG-8 TET utilizes NAND flash technology to store data. It consists of a grid of memory cells that can be electrically programmed and erased. The data is stored as electrical charges within these cells, which can be read by applying appropriate voltages to the memory array.

Detailed Application Field Plans

The MT28F400B5SG-8 TET finds applications in various electronic devices, including: - Smartphones and tablets - Digital cameras - Portable media players - Solid-state drives (SSDs) - Industrial control systems - Automotive electronics

Detailed and Complete Alternative Models

1. MT29F4G08ABAEAWP-IT: 4 gigabit NAND Flash Memory with similar specifications.
2. S34ML04G200TFI000: 4 gigabit NAND Flash Memory with advanced features and higher endurance.
3. IS37SML01G2A2: 1 gigabit NAND Flash Memory with lower capacity but similar performance.

These alternative models offer similar functionality and can be considered as alternatives to the MT28F400B5SG-8 TET based on specific requirements and compatibility with the target system.

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