MT29F2G08ABDHC:D TR

Product Overview

Category

MT29F2G08ABDHC:D TR belongs to the category of NAND Flash Memory.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: MT29F2G08ABDHC:D TR offers a storage capacity of 2 gigabits (256 megabytes).
• Non-volatile memory: The data stored in this NAND flash memory is retained even when power is turned off.
• Fast read and write speeds: It provides high-speed data transfer rates, allowing for quick access to stored information.
• Compact package: The MT29F2G08ABDHC:D TR comes in a small form factor, making it suitable for space-constrained applications.
• Reliable performance: This flash memory is designed to withstand frequent read/write operations and has a long lifespan.

Package and Quantity

The MT29F2G08ABDHC:D TR is available in a surface-mount TSOP (Thin Small Outline Package) with 48 pins. It is typically sold in reels containing multiple units.

Specifications

• Storage Capacity: 2 gigabits (256 megabytes)
• Interface: NAND
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Transfer Rate: Up to 200 megabytes per second (read), up to 100 megabytes per second (write)

Pin Configuration

The detailed pin configuration of MT29F2G08ABDHC:D TR is as follows:

1. VCC
2. ALE
3. CLE
4. CE#
5. RE#
6. WE#
7. WP#
8. R/B#
9. VSS
10. NC
11. NC
12. NC
13. NC
14. NC
15. NC
16. NC
17. NC
18. NC
19. NC
20. NC
21. NC
22. NC
23. NC
24. NC
25. NC
26. NC
27. NC
28. NC
29. NC
30. NC
31. NC
32. NC
33. NC
34. NC
35. NC
36. NC
37. NC
38. NC
39. NC
40. NC
41. NC
42. NC
43. NC
44. NC
45. NC
46. NC
47. NC
48. VCC

Functional Features

• Block Erase: The MT29F2G08ABDHC:D TR supports block erase operations, allowing for efficient management of data.
• Page Program: It enables the programming of individual pages, facilitating flexible data storage and modification.
• Read Retry: This feature ensures reliable data retrieval by automatically retrying read operations in case of errors.
• Bad Block Management: The NAND flash memory incorporates mechanisms to handle and mark bad blocks, ensuring data integrity.

Advantages and Disadvantages

Advantages

• High storage capacity for a wide range of applications.
• Fast read and write speeds enhance overall system performance.
• Compact package size allows for integration into small devices.
• Reliable performance and long lifespan ensure data durability.

Disadvantages

• Limited endurance: Frequent write operations may reduce the lifespan of the memory.
• Susceptible to electrical interference: Sensitive to voltage fluctuations and electromagnetic fields.

Working Principles

The MT29F2G08ABDHC:D TR utilizes NAND flash technology, which stores data in memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the charge level in the floating gate. When reading data, the charge levels are measured to determine the stored values. During write operations, the charge levels are adjusted to store new data.

Detailed Application Field Plans

The MT29F2G08ABDHC:D TR is widely used in various electronic devices and systems, including: - Smartphones and tablets for storing operating systems, applications, and user data. - Digital cameras for storing photos and videos. - Solid-state drives (SSDs) for high-speed data storage in computers and servers. - Industrial control systems for reliable and durable data storage. - Automotive electronics for storing firmware, maps, and multimedia content.

Alternative Models

Here are some alternative models that offer similar functionality to MT29F2G08ABDHC:D TR:

1. MT29F2G16ABDHC:D TR
2. MT29F4G08ABDHC:D TR
3. MT29F8G08ABDHC:D TR
4. MT29F16G08ABDHC:D TR

These models