MT29F4G08ABBDAH4-IT:D

Product Overview

Category

The MT29F4G08ABBDAH4-IT:D belongs to the category of NAND flash memory chips.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F4G08ABBDAH4-IT:D offers a storage capacity of 4 gigabytes (GB), allowing for ample data storage.
• Fast data transfer rate: With its high-speed interface, this NAND flash memory chip enables quick data read and write operations.
• Reliable performance: The product is designed to provide reliable and consistent performance over an extended period.
• Low power consumption: The MT29F4G08ABBDAH4-IT:D is energy-efficient, consuming minimal power during operation.
• Compact package: This chip comes in a compact form factor, making it suitable for integration into small-sized electronic devices.

Packaging/Quantity

The MT29F4G08ABBDAH4-IT:D is typically packaged in a surface-mount technology (SMT) package. It is available in reels or trays, with varying quantities depending on the manufacturer's specifications.

Specifications

• Memory Type: NAND Flash
• Capacity: 4 GB
• Interface: Parallel
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: TSOP (Thin Small Outline Package)
• Pin Count: 48

Detailed Pin Configuration

1. VCC: Power supply voltage
2. GND: Ground
3. A0-A18: Address inputs
4. CLE: Command latch enable
5. ALE: Address latch enable
6. RE: Read enable
7. WE: Write enable
8. WP: Write protect
9. R/B: Ready/busy status
10. DQ0-DQ7: Data input/output

(Note: The pin configuration may vary depending on the manufacturer's specifications.)

Functional Features

• Page Program: Allows data to be written in page-sized increments.
• Block Erase: Enables erasing of data in block-sized units.
• Random Access: Provides random access to any memory location for efficient data retrieval.
• Error Correction Code (ECC): Incorporates ECC algorithms to ensure data integrity and reliability.
• Wear Leveling: Implements wear-leveling techniques to distribute write operations evenly across memory cells, prolonging the lifespan of the chip.

Advantages and Disadvantages

Advantages

• High storage capacity allows for extensive data storage.
• Fast data transfer rate enables quick read and write operations.
• Reliable performance ensures consistent data access.
• Low power consumption contributes to energy efficiency.
• Compact package facilitates integration into small electronic devices.

Disadvantages

• Limited endurance: NAND flash memory chips have a finite number of program/erase cycles before they become unreliable.
• Susceptible to data corruption: Without proper error correction mechanisms, NAND flash memory can be prone to data corruption.

Working Principles

The MT29F4G08ABBDAH4-IT:D utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the electrical charge applied to it. To write data, an electrical charge is applied to the appropriate memory cells, altering their state. Reading data involves detecting the electrical charge levels in the memory cells to retrieve the stored information.

Detailed Application Field Plans

The MT29F4G08ABBDAH4-IT:D finds application in various electronic devices, including: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems

Detailed and Complete Alternative Models

1. MT29F4G08ABADAWP-IT:D
2. MT29F4G08ABADAH4-IT:E
3. MT29F4G08ABADAWP-IT:E
4. MT29F4G08ABBDAH4-IT:E
5. MT29F4G08ABBDAH4-IT:F

(Note: The alternative models listed above are subject to availability and may vary depending on the manufacturer.)

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