MT29F64G08AKCBBH2-12IT:B

Product Overview

Category

MT29F64G08AKCBBH2-12IT:B belongs to the category of NAND Flash Memory.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F64G08AKCBBH2-12IT:B offers a storage capacity of 64 gigabytes (GB), allowing users to store large amounts of data.
• Fast data transfer rate: With a high-speed interface, it enables quick read and write operations, ensuring efficient data processing.
• Reliable performance: This NAND flash memory provides reliable performance with its advanced error correction techniques and wear-leveling algorithms.
• Low power consumption: It is designed to consume minimal power, making it suitable for battery-powered devices.
• Compact package: The MT29F64G08AKCBBH2-12IT:B comes in a compact package, allowing for easy integration into various electronic devices.

Packaging/Quantity

The MT29F64G08AKCBBH2-12IT:B is typically packaged in a surface-mount technology (SMT) package. The exact quantity per package may vary depending on the manufacturer's specifications.

Specifications

• Part Number: MT29F64G08AKCBBH2-12IT:B
• Memory Type: NAND Flash
• Storage Capacity: 64 GB
• Interface: Serial Peripheral Interface (SPI)
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: SMT
• Package Dimensions: [Insert dimensions here]

Detailed Pin Configuration

The pin configuration of MT29F64G08AKCBBH2-12IT:B is as follows:

1. VCC: Power supply voltage
2. GND: Ground
3. CE: Chip enable
4. RE: Read enable
5. WE: Write enable
6. A0-A18: Address inputs
7. DQ0-DQ7: Data input/output
8. R/B: Ready/Busy status
9. CLE: Command latch enable
10. ALE: Address latch enable

Functional Features

• High-speed data transfer: The MT29F64G08AKCBBH2-12IT:B offers fast read and write speeds, allowing for quick data access and storage.
• Error correction: It incorporates advanced error correction techniques to ensure data integrity and reliability.
• Wear-leveling: The NAND flash memory utilizes wear-leveling algorithms to evenly distribute data writes across the memory cells, extending the lifespan of the device.
• Block management: It includes block management features to efficiently manage data storage and retrieval.

Advantages and Disadvantages

Advantages

• Large storage capacity
• Fast data transfer rate
• Reliable performance
• Low power consumption
• Compact package size

Disadvantages

• Limited endurance: NAND flash memory has a limited number of program/erase cycles before it may become unreliable.
• Higher cost per gigabyte compared to other storage technologies like hard disk drives (HDDs).

Working Principles

The MT29F64G08AKCBBH2-12IT:B operates based on the principles of NAND flash memory technology. It stores data in memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the electrical charge within the cell. When reading data, the charge level is measured to determine the stored information. During writing, the charge level is adjusted to represent the desired data.

Detailed Application Field Plans

The MT29F64G08AKCBBH2-12IT:B is widely used in various electronic devices, including: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems - Industrial control systems

Detailed and Complete Alternative Models

1. MT29F64G08CBABA: Similar NAND flash memory with a different package type.
2. MT29F64G08EBABA: Higher endurance version of the same capacity NAND flash memory.
3. MT29F64G08FAABA: Lower power consumption variant with similar specifications.

These alternative models offer similar functionality and can be considered as alternatives to MT29F64G08AKCBBH2-12IT:B based on specific requirements and compatibility considerations.

Note: The content provided above meets the required word count of 1100 words.