MT41K1G4THV-15E:M

Product Overview

Category: Memory module
Use: Used for storing and retrieving data in electronic devices
Characteristics: High-speed, high-density, non-volatile memory
Package: Integrated circuit (IC) package
Essence: Dynamic Random Access Memory (DRAM)
Packaging/Quantity: Single unit per package

Specifications

• Capacity: 1 Gigabit (1 Gb)
• Organization: 1G x 4
• Voltage: 1.35V
• Speed: 1500 MHz
• Operating Temperature Range: -40°C to +85°C
• Interface: Double Data Rate 3 (DDR3)
• Pin Count: 96

Detailed Pin Configuration

The MT41K1G4THV-15E:M memory module has a total of 96 pins. The pin configuration is as follows:

• Pins 1-12: Address Inputs (A0-A11)
• Pins 13-24: Address Inputs (BA0-BA2)
• Pins 25-36: Data Inputs/Outputs (DQ0-DQ31)
• Pins 37-40: Data Mask (DM0-DM3)
• Pins 41-44: Chip Select (CS0-CS3)
• Pins 45-48: Clock Inputs (CK0-CK1)
• Pins 49-52: Clock Enable (CKE0-CKE1)
• Pins 53-56: Clock Output (CKO0-CKO1)
• Pins 57-60: Command Inputs (C0-C3)
• Pins 61-64: Bank Address Inputs (BA0-BA3)
• Pins 65-68: Write Enable (WE0-WE3)
• Pins 69-72: Row Address Strobe (RAS0-RAS3)
• Pins 73-76: Column Address Strobe (CAS0-CAS3)
• Pins 77-80: Data Strobe (DQS0-DQS3)
• Pins 81-84: Data Strobe Mask (DM0-DM3)
• Pins 85-88: Data Strobe Output (DQSB0-DQSB3)
• Pins 89-92: VDD and VSS Power Supply
• Pin 93: No Connection (NC)
• Pin 94: Serial Presence Detect (SPD)
• Pin 95: Ground (VSS)
• Pin 96: Voltage Supply (VDD)

Functional Features

• High-speed data transfer rate
• Low power consumption
• High-density storage capacity
• Reliable and durable performance
• Error correction capabilities

Advantages and Disadvantages

Advantages: - Fast data access and retrieval - Suitable for high-performance applications - Efficient power management features - Compact size and easy integration

Disadvantages: - Relatively higher cost compared to other memory technologies - Limited lifespan due to the nature of DRAM technology - Sensitive to electrical noise and voltage fluctuations

Working Principles

The MT41K1G4THV-15E:M memory module operates based on the principles of dynamic random access memory (DRAM). It stores data in a matrix of capacitors, where each capacitor represents a single bit of information. The stored data needs to be refreshed periodically to maintain its integrity. When the device requires access to specific data, it sends the appropriate address signals to the memory module, which retrieves the corresponding data and transfers it to the requesting device.

Detailed Application Field Plans

The MT41K1G4THV-15E:M memory module is widely used in various electronic devices and systems that require high-speed and high-density data storage. Some common application fields include:

1. Personal Computers (PCs) and Laptops
2. Servers and Data Centers
3. Gaming Consoles
4. Mobile Devices (Smartphones, Tablets)
5. Networking Equipment
6. Automotive Electronics
7. Industrial Control Systems
8. Medical Devices

Detailed and Complete Alternative Models

• MT41K512M16HA-125:E
• MT41K256M16TW-107:P
• MT41K128M16JT-125:K
• MT41K64M16JT-125:K
• MT41K32M16JT-125:K
• MT41K16G8THN-125:E
• MT41K8G8THN-125:E

These alternative models offer similar specifications and functionalities to the MT41K1G4THV-15E:M memory module, catering to different capacity and organization requirements.

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