MT41K256M16HA-125 M AIT:E TR

Product Overview

Category

The MT41K256M16HA-125 M AIT:E TR belongs to the category of dynamic random-access memory (DRAM) modules.

Use

This product is primarily used in computer systems, servers, and other electronic devices that require high-speed data storage and retrieval.

Characteristics

• High capacity: The MT41K256M16HA-125 M AIT:E TR offers a storage capacity of 256 megabits (32 megabytes).
• High speed: With a clock frequency of 125 MHz, this module provides fast data access and transfer rates.
• Low power consumption: It operates at low voltage levels, making it energy-efficient.
• Reliable performance: The product is designed to deliver stable and consistent performance over extended periods.

Package

The MT41K256M16HA-125 M AIT:E TR comes in a compact and standardized package, conforming to industry standards for DRAM modules.

Essence

The essence of this product lies in its ability to store and retrieve data quickly and reliably, enhancing the overall performance of electronic devices.

Packaging/Quantity

The MT41K256M16HA-125 M AIT:E TR is typically packaged in trays or reels, ensuring safe transportation and handling. The quantity per package varies depending on customer requirements.

Specifications

• Memory Type: DDR3 SDRAM
• Organization: 256M words x 16 bits
• Operating Voltage: 1.5V
• Clock Frequency: 125 MHz
• Data Rate: 250 Mbps
• CAS Latency: 11 cycles
• Refresh Rate: 8K cycles/64ms

Detailed Pin Configuration

The MT41K256M16HA-125 M AIT:E TR has a total of 78 pins, which are arranged as follows:

• Pin 1: VSS (Ground)
• Pin 2: DQ0 (Data Input/Output Bit 0)
• Pin 3: DQ1 (Data Input/Output Bit 1)
• ...
• Pin 78: VDD (Power Supply)

For a complete pin configuration diagram, please refer to the product datasheet.

Functional Features

• Burst Mode: The module supports burst mode operations, allowing for efficient data transfer.
• Auto Precharge: It automatically precharges memory cells after a read or write operation, optimizing performance.
• On-Die Termination (ODT): ODT helps reduce signal reflections and improve signal integrity.
• Self-Refresh: The module can enter a self-refresh mode to conserve power when not in use.

Advantages and Disadvantages

Advantages

• High-speed data access and transfer rates enhance system performance.
• Low power consumption contributes to energy efficiency.
• Reliable performance ensures stable operation over time.
• Compact package size allows for easy integration into various devices.

Disadvantages

• Limited storage capacity compared to higher-end DRAM modules.
• Higher cost per unit compared to lower-capacity alternatives.

Working Principles

The MT41K256M16HA-125 M AIT:E TR operates based on DDR3 SDRAM technology. It stores data in an array of capacitors, with each capacitor representing a single bit of information. The module uses a clock signal to synchronize data transfers between the memory cells and the device accessing the memory.

Detailed Application Field Plans

The MT41K256M16HA-125 M AIT:E TR is widely used in various applications, including: - Personal computers - Laptops and notebooks - Servers and data centers - Networking equipment - Embedded systems - Gaming consoles

Its high-speed and reliable performance make it suitable for demanding tasks such as gaming, multimedia processing, and data-intensive applications.

Detailed and Complete Alternative Models

• MT41K128M16JT-125: A lower-capacity variant with 128 megabits (16 megabytes) of storage.
• MT41K512M16HA-125: A higher-capacity variant with 512 megabits (64 megabytes) of storage.
• MT41K256M32JD-125: A variant with the same capacity but organized as 256M words x 32 bits.

These alternative models offer different capacities and organization options to cater to diverse system requirements.

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