MT41K2G4TRF-125:E TR

Product Overview

Category

MT41K2G4TRF-125:E TR belongs to the category of dynamic random-access memory (DRAM) modules.

Use

This product is primarily used in computer systems, servers, and high-performance computing applications that require fast and reliable data storage and retrieval.

Characteristics

• High-speed operation: The MT41K2G4TRF-125:E TR offers fast data transfer rates, enabling efficient processing of large amounts of information.
• Large capacity: With a capacity of 2 gigabits (256 megabytes), this DRAM module provides ample storage space for demanding applications.
• Low power consumption: The module is designed to operate efficiently while consuming minimal power, making it suitable for energy-conscious systems.
• Error correction: It incorporates error-correcting code (ECC) technology, which enhances data integrity by detecting and correcting errors during read and write operations.

Package and Quantity

The MT41K2G4TRF-125:E TR is packaged in a small outline dual in-line memory module (SODIMM) form factor. Each package contains one module.

Specifications

• Memory type: DDR3 SDRAM
• Memory capacity: 2 gigabits (256 megabytes)
• Operating voltage: 1.35 volts
• Speed grade: 125
• Organization: 512M x 4
• Refresh rate: 8K cycles/32 ms
• CAS latency: CL11
• Burst length: 8

Pin Configuration

The pin configuration of the MT41K2G4TRF-125:E TR module is as follows:

| Pin Number | Function | |------------|----------| | 1 | VSS | | 2 | DQ0 | | 3 | DQ1 | | 4 | VSS | | 5 | DQ2 | | 6 | DQ3 | | 7 | VSS | | 8 | DQ4 | | 9 | DQ5 | | 10 | VSS | | ... | ... | | 204 | VDDSPD | | 205 | VREFCA | | 206 | VSS | | 207 | VDD | | 208 | VDD |

Functional Features

• High-speed data transfer: The MT41K2G4TRF-125:E TR module supports fast data transfer rates, enabling efficient processing of large datasets.
• Error correction: ECC technology ensures data integrity by detecting and correcting errors during read and write operations.
• Low power consumption: The module is designed to operate efficiently while consuming minimal power, making it suitable for energy-conscious systems.
• Compatibility: It is compatible with various computer systems and servers that support DDR3 SDRAM modules.

Advantages

• Fast data transfer rates enhance system performance.
• Error-correcting code technology improves data reliability.
• Low power consumption contributes to energy efficiency.
• Wide compatibility allows for easy integration into existing systems.

Disadvantages

• Limited capacity compared to higher-density memory modules.
• Higher cost per gigabit compared to larger capacity modules.

Working Principles

The MT41K2G4TRF-125:E TR module operates based on the principles of dynamic random-access memory. It stores data in capacitors within the memory cells, which are periodically refreshed to maintain data integrity. When data needs to be accessed, the module retrieves it from the appropriate memory cells and transfers it to the processor or other components.

Application Field Plans

The MT41K2G4TRF-125:E TR module finds applications in various fields, including: 1. Computer systems: It is used in desktop computers and laptops to provide fast and reliable memory for operating systems and applications. 2. Servers: The module is utilized in server systems to handle large amounts of data and ensure efficient data processing. 3. High-performance computing: It is employed in supercomputers and high-performance computing clusters to support complex calculations and simulations.

Alternative Models

For users seeking alternative options, the following DRAM modules can be considered: 1. MT41K2G4TRF-125: This variant offers the same specifications and features as the MT41K2G4TRF-125:E TR but does not include ECC technology. 2. MT41K2G4TRF-125IT:E: This model is similar to the MT41K2G4TRF-125:E TR but operates at an extended temperature range, making it suitable for industrial applications.

In conclusion, the MT41K2G4TRF-125:E TR is a high-speed, low-power DDR3 SDRAM module with error correction capabilities.