MT46H32M16LFBF-6 AAT:C TR

Product Overview

Category

The MT46H32M16LFBF-6 AAT:C TR belongs to the category of dynamic random access memory (DRAM) chips.

Use

This product is primarily used in electronic devices such as computers, smartphones, and tablets for data storage and retrieval purposes.

Characteristics

• High-speed operation: The MT46H32M16LFBF-6 AAT:C TR offers fast data transfer rates, enabling efficient processing of large amounts of information.
• Large storage capacity: With a capacity of 32 megabits (4 megabytes), this DRAM chip can store a significant amount of data.
• Low power consumption: The chip is designed to consume minimal power, making it suitable for battery-powered devices.
• Compact package: The MT46H32M16LFBF-6 AAT:C TR is available in a small form factor package, allowing for space-efficient integration into electronic devices.
• RoHS compliant: This product adheres to the Restriction of Hazardous Substances directive, ensuring its environmental friendliness.

Package and Quantity

The MT46H32M16LFBF-6 AAT:C TR is packaged in a surface-mount technology (SMT) package. It is typically supplied in reels or trays, with quantities varying based on customer requirements.

Specifications

• Part Number: MT46H32M16LFBF-6 AAT:C TR
• Memory Type: Dynamic Random Access Memory (DRAM)
• Organization: 32M words x 16 bits
• Operating Voltage: 1.8V
• Speed Grade: -6
• Temperature Range: Commercial (0°C to 70°C)
• Package Type: FBGA (Fine-Pitch Ball Grid Array)
• Pin Count: 60 pins

Detailed Pin Configuration

The MT46H32M16LFBF-6 AAT:C TR has a total of 60 pins. The pin configuration is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. DQ8
11. DQ9
12. DQ10
13. DQ11
14. DQ12
15. DQ13
16. DQ14
17. DQ15
18. VSS
19. VSS
20. VSS
21. VSS
22. VSS
23. VSS
24. VSS
25. VSS
26. VSS
27. VSS
28. VSS
29. VSS
30. VSS
31. VSS
32. VSS
33. VSS
34. VSS
35. VSS
36. VSS
37. VSS
38. VSS
39. VSS
40. VSS
41. VSS
42. VSS
43. VSS
44. VSS
45. VSS
46. VSS
47. VSS
48. VSS
49. VSS
50. VSS
51. VSS
52. VSS
53. VSS
54. VSS
55. VSS
56. VSS
57. VSS
58. VSS
59. VSS
60. VSS

Functional Features

• Random Access: The MT46H32M16LFBF-6 AAT:C TR allows for random access to stored data, enabling quick retrieval and modification.
• Refresh Capability: This DRAM chip incorporates a refresh mechanism to maintain data integrity over time.
• Burst Mode Operation: It supports burst mode operation, allowing for efficient sequential data access.
• Low Latency: The MT46H32M16LFBF-6 AAT:C TR offers low latency, minimizing delays in data transfer.

Advantages and Disadvantages

Advantages

• High-speed operation enables fast data processing.
• Large storage capacity accommodates extensive data requirements.
• Low power consumption prolongs battery life in portable devices.
• Compact package facilitates space-efficient integration.
• RoHS compliance ensures environmental friendliness.

Disadvantages

• Requires periodic refresh cycles to maintain data integrity.
• Sensitive to electrical noise and voltage fluctuations.
• Limited operating temperature range (0°C to 70°C).

Working Principles

The MT46H32M16LFBF-6 AAT:C TR operates based on the principles of dynamic random access memory. It utilizes a capacitor-based storage cell to store binary data as electrical charges. These charges need to be periodically refreshed to prevent data loss. When