MT46V64M8FN-75 L:D

Basic Information Overview

• Category: Memory module
• Use: Storage and retrieval of digital information in electronic devices
• Characteristics: High-speed, non-volatile, random access memory (RAM)
• Package: Integrated circuit (IC) chip
• Essence: Stores data temporarily for quick access by the device's processor
• Packaging/Quantity: Typically sold in trays or reels containing multiple chips

Specifications

• Model: MT46V64M8FN-75 L:D
• Organization: 64 Meg x 8
• Voltage: 2.5V
• Speed: 75 nanoseconds (ns)
• Interface: Synchronous Dynamic Random Access Memory (SDRAM)
• Operating Temperature Range: -40°C to +85°C
• RoHS Compliance: Yes

Detailed Pin Configuration

The MT46V64M8FN-75 L:D has a total of 54 pins. The pin configuration is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VSS
20. A0
21. A1
22. A2
23. A3
24. A4
25. A5
26. A6
27. A7
28. A8
29. A9
30. A10
31. A11
32. A12
33. A13
34. A14
35. A15
36. VSS
37. WE#
38. CAS#
39. RAS#
40. CS#
41. CKE
42. BA0
43. BA1
44. VDD
45. CLK
46. DQM0
47. DQM1
48. VSS
49. NC
50. VDD
51. VDD
52. VSS
53. VSS
54. VSS

Functional Features

• High-speed data transfer rate for efficient processing
• Non-volatile memory retains data even when power is removed
• Random access allows quick retrieval of specific data
• Synchronous operation ensures synchronized communication with the device's processor
• Low power consumption for energy efficiency

Advantages and Disadvantages

Advantages: - Fast data transfer rate enhances overall system performance - Non-volatile memory ensures data integrity during power interruptions - Random access enables quick access to specific data - Synchronous operation allows for efficient communication with the processor - Low power consumption reduces energy usage

Disadvantages: - Limited storage capacity compared to other memory technologies - Relatively higher cost per unit compared to alternative memory options - Susceptible to data loss if not properly backed up or protected

Working Principles

The MT46V64M8FN-75 L:D operates based on the principles of synchronous dynamic random access memory (SDRAM). It stores digital information in a matrix of capacitors, which represent individual bits of data. The data is accessed by sending address signals to select the desired memory location, and the stored information is retrieved by reading the charge level of the capacitors.

Detailed Application Field Plans

The MT46V64M8FN-75 L:D is commonly used in various electronic devices that require high-speed, temporary storage of data. Some application fields where this memory module finds application include: 1. Personal computers 2. Laptops and notebooks 3. Servers and data centers 4. Networking equipment 5. Gaming consoles 6. Mobile devices

Detailed and Complete Alternative Models

• MT46V64M8FN-75 IT: Similar specifications, but operates at an industrial temperature range (-40°C to +95°C).
• MT46V64M8FN-75 B:D: Same specifications, but available in a different package type (BGA instead of TSOP).

Note: This is not an exhaustive list of alternative models, and there may be other options available from different manufacturers.

In conclusion, the MT46V64M8FN-75 L:D is a high-speed, non-volatile memory module used for temporary storage of digital information in various electronic devices. Its synchronous operation, fast data transfer rate, and low power consumption make it suitable for applications requiring efficient data handling. However, its limited storage capacity and relatively higher cost compared to alternative memory options should be considered when selecting the appropriate memory module for a specific application.