MT46V64M8TG-75E:D TR

Product Overview

Category

MT46V64M8TG-75E:D TR belongs to the category of dynamic random access memory (DRAM) chips.

Use

This product is primarily used in computer systems, mobile devices, and other electronic devices that require high-speed data storage and retrieval.

Characteristics

• High-density storage capacity
• Fast data access and transfer rates
• Low power consumption
• Compact package size
• Reliable performance

Package

MT46V64M8TG-75E:D TR is available in a small outline dual in-line memory module (SODIMM) package.

Essence

The essence of this product lies in its ability to provide efficient and reliable data storage and retrieval capabilities for various electronic devices.

Packaging/Quantity

MT46V64M8TG-75E:D TR is typically packaged in trays or reels, with each package containing a specific quantity of chips. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: DDR2 SDRAM
• Capacity: 512 Megabytes (64 Megabytes x 8)
• Speed Grade: PC2-5300 (DDR2-667)
• Operating Voltage: 1.8 Volts
• Organization: 64M words x 8 bits
• Refresh Mode: Auto-refresh and self-refresh
• CAS Latency: 5
• Burst Length: 4 and 8
• Interface: SSTL_18

Detailed Pin Configuration

The pin configuration of MT46V64M8TG-75E:D TR is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. NC
12. DQ8
13. DQ9
14. DQ10
15. DQ11
16. DQ12
17. DQ13
18. DQ14
19. DQ15
20. VSS
21. A0
22. A1
23. A2
24. A3
25. A4
26. A5
27. A6
28. A7
29. VSS
30. A8
31. A9
32. A10
33. A11
34. A12
35. A13
36. A14
37. A15
38. VSS
39. BA0
40. BA1
41. RAS#
42. CAS#
43. WE#
44. CS#
45. VSS
46. CLK
47. CKE
48. NC

Functional Features

• High-speed data access and transfer capabilities
• Efficient refresh mechanism for maintaining data integrity
• Low power consumption for improved energy efficiency
• Compatibility with various electronic devices and systems
• Reliable performance under different operating conditions

Advantages and Disadvantages

Advantages

• High-density storage capacity allows for storing large amounts of data.
• Fast data access and transfer rates enhance overall system performance.
• Low power consumption helps to prolong battery life in mobile devices.
• Compact package size enables easy integration into space-constrained designs.
• Reliable performance ensures data integrity and system stability.

Disadvantages

• Limited compatibility with newer memory standards, such as DDR3 or DDR4.
• Relatively lower data transfer rates compared to newer memory technologies.
• Higher cost per unit compared to older memory technologies.

Working Principles

MT46V64M8TG-75E:D TR operates based on the principles of dynamic random access memory. It stores data in a matrix of capacitors, with each capacitor representing a single bit of information. The stored data needs to be periodically refreshed to maintain its integrity. When the system requires accessing or modifying specific data, the memory controller sends appropriate signals to the chip, allowing for read or write operations.

Detailed Application Field Plans

MT46V64M8TG-75E:D TR finds applications in various electronic devices and systems, including: - Personal computers - Laptops and notebooks - Servers - Mobile phones and tablets - Gaming consoles - Networking equipment

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to MT46V64M8TG-75E:D TR include: - MT47H64M16HR-25E:G - MT41K256M16TW-107:P - MT9VDDT6472AY-40BF4

These alternative models provide comparable storage capacity, data transfer rates, and compatibility with different systems and devices.

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