MT47H128M16RT-25E IT:C TR

Product Overview

Category

The MT47H128M16RT-25E IT:C TR belongs to the category of semiconductor memory devices.

Use

This product is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and tablets.

Characteristics

• High-speed operation: The MT47H128M16RT-25E IT:C TR offers fast data access and transfer rates, enabling efficient processing of large amounts of information.
• Large storage capacity: With a capacity of 128 megabits (16 megabytes), this memory device can store a significant amount of data.
• Low power consumption: The product is designed to consume minimal power, making it suitable for battery-powered devices.
• Reliable performance: It features robust error correction capabilities, ensuring data integrity and reliability.

Package and Quantity

The MT47H128M16RT-25E IT:C TR is available in a compact package that facilitates easy integration into various electronic systems. It is typically sold in quantities of one or more units per package.

Specifications

• Model: MT47H128M16RT-25E IT:C TR
• Memory Type: Dynamic Random Access Memory (DRAM)
• Capacity: 128 megabits (16 megabytes)
• Operating Voltage: 2.5V
• Speed: 25 nanoseconds (ns)
• Interface: Double Data Rate 3 (DDR3)
• Pin Count: 96 pins
• Package Type: Thin Small Outline Package (TSOP)

Detailed Pin Configuration

The MT47H128M16RT-25E IT:C TR has a total of 96 pins arranged in a specific configuration. The pinout diagram below illustrates the detailed pin assignments:

Functional Features

• High-speed data access: The MT47H128M16RT-25E IT:C TR offers fast read and write operations, enabling quick data retrieval and storage.
• Error correction: It incorporates advanced error correction techniques to ensure data integrity and minimize the risk of data loss or corruption.
• Auto-refresh capability: The device automatically refreshes stored data at regular intervals, preventing data loss due to decay.

Advantages and Disadvantages

Advantages

• High-speed operation enables efficient data processing.
• Large storage capacity accommodates substantial amounts of data.
• Low power consumption makes it suitable for battery-powered devices.
• Reliable performance with robust error correction capabilities.

Disadvantages

• Limited compatibility: The MT47H128M16RT-25E IT:C TR is designed specifically for DDR3 interfaces and may not be compatible with older or alternative memory standards.
• Relatively higher cost compared to lower-capacity memory devices.

Working Principles

The MT47H128M16RT-25E IT:C TR operates based on the principles of dynamic random access memory (DRAM). It stores data in a matrix of capacitors, where each capacitor represents a single bit of information. To read or write data, the device applies electrical charges to the appropriate capacitors, altering their states accordingly.

Detailed Application Field Plans

The MT47H128M16RT-25E IT:C TR finds extensive application in various electronic devices and systems, including: 1. Personal computers and laptops 2. Servers and data centers 3. Mobile phones and tablets 4. Gaming consoles 5. Networking equipment

Alternative Models

For users seeking alternatives to the MT47H128M16RT-25E IT:C TR, the following models offer similar functionality and specifications: 1. MT47H64M16HR-25E IT:H TR 2. MT47H256M16HR-25E IT:H TR 3. MT47H512M16HR-25E IT:H TR

These alternative models provide a range of storage capacities and are compatible with DDR3 interfaces.

In conclusion, the MT47H128M16RT-25E IT:C TR is a high-performance semiconductor memory device that offers fast data access, large storage capacity, and low power consumption. Its robust error correction capabilities ensure reliable data integrity. With its wide range of applications and availability of alternative models, this product serves as a versatile solution for various electronic systems.