BSS84AKS,115

Product Overview

Category: Semiconductor
Use: Switching and Amplification
Characteristics: Low voltage, high speed, small package
Package: SOT23
Essence: N-channel enhancement mode Field-Effect Transistor (FET)
Packaging/Quantity: Tape and Reel, 3000 pieces

Specifications

• Voltage - Drain-Source Breakdown (V(BR)DSS): 50V
• Current - Continuous Drain (Id) @ 25°C: 130mA
• Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 100mA, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) @ Vgs: 3nC @ 10V
• Input Capacitance (Ciss) @ Vds: 30pF @ 25V

Detailed Pin Configuration

The BSS84AKS,115 has three pins: Gate (G), Drain (D), and Source (S). The pin configuration is as follows: - Pin 1 (G): Gate - Pin 2 (D): Drain - Pin 3 (S): Source

Functional Features

• Fast switching speed
• Low threshold voltage
• Small package size

Advantages and Disadvantages

Advantages: - Low voltage operation - High-speed switching - Small form factor

Disadvantages: - Limited current handling capability - Sensitivity to static electricity

Working Principles

The BSS84AKS,115 operates based on the principles of field-effect transistors, utilizing an electric field to control the conductivity of the channel.

Detailed Application Field Plans

This transistor is commonly used in low-voltage switching applications such as portable electronics, power management circuits, and signal amplification.

Detailed and Complete Alternative Models

• Alternative Model 1: BSS138
• Alternative Model 2: BS170
• Alternative Model 3: 2N7002

Note: The alternative models listed above are similar N-channel FETs with comparable characteristics and package types.

This entry provides a comprehensive overview of the BSS84AKS,115 semiconductor, including its product details, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.