PDTA114TU,115

Product Overview

• Category: Transistor
• Use: Amplification and switching of electronic signals
• Characteristics: Small signal NPN transistor, high current gain, low voltage, and power dissipation
• Package: SOT23, SMD plastic package
• Essence: High performance in a compact form
• Packaging/Quantity: Tape and reel, 3000 units per reel

Specifications

• Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 50V
• Current - Collector (Ic) (Max): 100mA
• Power - Max: 250mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2mA, 5V
• Frequency - Transition: 250MHz

Detailed Pin Configuration

1. Base (B)
2. Emitter (E)
3. Collector (C)

Functional Features

• High current gain
• Low voltage and power dissipation
• Compact SMD plastic package

Advantages

• Small size
• High current gain
• Suitable for high-frequency applications

Disadvantages

• Limited maximum voltage and current ratings
• Sensitive to temperature variations

Working Principles

The PDTA114TU,115 operates as a small signal NPN transistor, amplifying and switching electronic signals. When a small current flows into the base (B) terminal, it controls a larger current flowing between the collector (C) and emitter (E) terminals.

Detailed Application Field Plans

This transistor is suitable for use in audio amplifiers, signal processing circuits, and high-frequency applications due to its high current gain and low power dissipation.

Detailed and Complete Alternative Models

• BC547
• 2N2222
• 2N3904

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This content provides a comprehensive overview of the PDTA114TU,115 transistor, covering its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.