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MRF8HP21080HR3
Product Overview
The MRF8HP21080HR3 belongs to the category of high-power RF transistors and is designed for use in applications requiring high-frequency, high-power amplification. This transistor exhibits characteristics such as high gain, high efficiency, and ruggedness, making it suitable for demanding RF power amplifier designs. The package type for the MRF8HP21080HR3 is a NI-1230H, and it is available in quantities suitable for both prototyping and production.
Specifications
- Frequency Range: 2110 - 2170 MHz
- Output Power: 80 Watts
- Gain: 18 dB
- Efficiency: 45%
- Package Type: NI-1230H
- Quantity: Available for prototyping and production
Detailed Pin Configuration
The MRF8HP21080HR3 features a detailed pin configuration that includes input, output, and biasing pins, ensuring proper integration into RF amplifier circuits.
Functional Features
- High Gain: Provides significant signal amplification capabilities.
- High Efficiency: Ensures minimal power loss during signal amplification.
- Ruggedness: Capable of withstanding harsh operating conditions.
Advantages and Disadvantages
Advantages
- High power handling capability
- Suitable for high-frequency applications
- Reliable performance under demanding conditions
Disadvantages
- Higher cost compared to lower power alternatives
- Requires careful thermal management due to high power dissipation
Working Principles
The MRF8HP21080HR3 operates based on the principles of RF amplification, where input signals are amplified to higher power levels while maintaining signal integrity and linearity.
Detailed Application Field Plans
The MRF8HP21080HR3 is well-suited for use in various applications, including: - Cellular base station amplifiers - Wireless infrastructure amplifiers - Radar systems - Satellite communication systems
Detailed and Complete Alternative Models
- MRF8HP21250H
- MRF7S21170H
In conclusion, the MRF8HP21080HR3 is a high-power RF transistor designed for demanding RF amplifier applications, offering high gain, efficiency, and ruggedness. Its suitability for various high-frequency applications makes it a valuable component in modern RF systems.
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What is MRF8HP21080HR3?
- MRF8HP21080HR3 is a high-power RF transistor designed for use in applications requiring high frequency and power, such as radar systems and communication equipment.
What is the maximum power output of MRF8HP21080HR3?
- The maximum power output of MRF8HP21080HR3 is typically around 100 watts.
What frequency range does MRF8HP21080HR3 cover?
- MRF8HP21080HR3 covers a frequency range of approximately 2.1 to 2.18 GHz.
What are the typical applications for MRF8HP21080HR3?
- Typical applications for MRF8HP21080HR3 include radar systems, wireless communication infrastructure, and industrial, scientific, and medical (ISM) applications.
What is the operating voltage and current for MRF8HP21080HR3?
- The operating voltage for MRF8HP21080HR3 is typically around 28 volts, with an operating current of approximately 3.5 amps.
Does MRF8HP21080HR3 require any special heat management considerations?
- Yes, MRF8HP21080HR3 requires efficient heat dissipation due to its high-power operation. Proper thermal management is essential for reliable performance.
Is MRF8HP21080HR3 suitable for pulsed or continuous wave (CW) operation?
- MRF8HP21080HR3 is suitable for both pulsed and CW operation, making it versatile for various technical solutions.
What are the key performance specifications of MRF8HP21080HR3?
- Key performance specifications include high gain, high efficiency, and excellent linearity, making it well-suited for demanding RF applications.
Are there any recommended matching networks for MRF8HP21080HR3?
- Yes, specific matching networks may be required to optimize performance in different applications. Consult the datasheet or application notes for guidance.
What are the typical reliability and ruggedness characteristics of MRF8HP21080HR3?
- MRF8HP21080HR3 exhibits good reliability and ruggedness, allowing it to withstand harsh environmental conditions and maintain consistent performance over time.