2SB1202S-TL-E

Introduction

The 2SB1202S-TL-E is a semiconductor product belonging to the category of bipolar transistors. This entry provides an overview of its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

Basic Information Overview

• Category: Bipolar Transistor
• Use: Amplification and switching in electronic circuits
• Characteristics: High current gain, low noise, and high frequency capability
• Package: SOT-89
• Essence: NPN silicon epitaxial planar transistor
• Packaging/Quantity: Tape reel, 3000 units per reel

Specifications

• Collector-Base Voltage (VCBO): 60V
• Collector-Emitter Voltage (VCEO): 50V
• Emitter-Base Voltage (VEBO): 6V
• Collector Current (IC): 1A
• Power Dissipation (PD): 1W
• Transition Frequency (fT): 150MHz
• Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The 2SB1202S-TL-E has three pins: 1. Collector (C) 2. Base (B) 3. Emitter (E)

Functional Features

• High current amplification capability
• Low noise performance
• Suitable for high-frequency applications
• Compact SOT-89 package for space-constrained designs

Advantages and Disadvantages

Advantages

• High current gain
• Low noise operation
• Wide operating temperature range
• Small form factor

Disadvantages

• Limited power dissipation capability
• Relatively low collector-emitter voltage rating

Working Principles

The 2SB1202S-TL-E operates based on the principles of bipolar junction transistors, utilizing the flow of charge carriers to amplify or switch electronic signals.

Detailed Application Field Plans

The 2SB1202S-TL-E is suitable for various applications, including: - Audio amplifiers - RF amplifiers - Switching circuits - Oscillator circuits - Signal processing circuits

Detailed and Complete Alternative Models

Some alternative models to the 2SB1202S-TL-E include: - 2N3904 - BC547 - 2SC945 - BC337

In conclusion, the 2SB1202S-TL-E is a versatile bipolar transistor with high current gain, low noise, and high-frequency capabilities, making it suitable for a wide range of electronic applications.

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