2SB815-6-TB-E Encyclopedia Entry

Product Overview

The 2SB815-6-TB-E belongs to the category of discrete semiconductor products and is commonly used in electronic circuits for amplification and switching applications. This transistor exhibits characteristics such as high voltage capability, low saturation voltage, and fast switching speed. It is typically packaged in a small form factor, such as a TO-126 package, and is available in various quantities per package.

Specifications

• Maximum Collector-Base Voltage:
• Maximum Collector Current:
• Power Dissipation:
• Transition Frequency:
• Package Type:

Detailed Pin Configuration

The 2SB815-6-TB-E transistor consists of three pins: the emitter, base, and collector. The pin configuration is as follows: - Emitter (E): - Base (B): - Collector (C):

Functional Features

The 2SB815-6-TB-E transistor offers high voltage capability, making it suitable for use in power supply and amplifier circuits. Its low saturation voltage ensures efficient operation, while the fast switching speed enables rapid response in switching applications.

Advantages and Disadvantages

Advantages

• High voltage capability
• Low saturation voltage
• Fast switching speed

Disadvantages

• Potential for heat dissipation issues at high currents
• Sensitivity to overvoltage conditions

Working Principles

The 2SB815-6-TB-E operates based on the principles of bipolar junction transistors, utilizing the flow of charge carriers to amplify or switch electronic signals. When a small current flows into the base terminal, it controls a larger current between the collector and emitter terminals, enabling signal amplification or switching.

Detailed Application Field Plans

The 2SB815-6-TB-E transistor finds extensive application in various electronic circuits, including: - Audio amplifiers - Power supply units - Switching regulators - Motor control circuits

Detailed and Complete Alternative Models

• 2SB772
• 2SB688
• 2SB737
• 2SB817

This comprehensive list of alternative models provides users with options that exhibit similar characteristics and can be used as substitutes for the 2SB815-6-TB-E in different applications.

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This entry provides a detailed overview of the 2SB815-6-TB-E transistor, covering its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.