MMUN2214LT1G

Product Overview

Category: Transistor
Use: Amplification and switching of electronic signals
Characteristics: Small signal NPN transistor, low voltage operation
Package: SOT-23
Essence: High gain, low power consumption
Packaging/Quantity: Tape and reel, 3000 units per reel

Specifications

• Collector-Base Voltage (VCBO): 50V
• Collector-Emitter Voltage (VCEO): 40V
• Emitter-Base Voltage (VEBO): 5V
• Collector Current (IC): 600mA
• Power Dissipation (PD): 225mW
• Transition Frequency (fT): 250MHz
• Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

1. Base (B)
2. Emitter (E)
3. Collector (C)

Functional Features

• High current gain
• Low saturation voltage
• Fast switching speed

Advantages and Disadvantages

Advantages: - High gain - Small package size - Low power consumption

Disadvantages: - Limited collector current - Limited power dissipation

Working Principles

The MMUN2214LT1G operates as a small signal NPN transistor, amplifying and switching electronic signals. When a small current flows into the base terminal, it controls a larger current flowing between the collector and emitter terminals.

Detailed Application Field Plans

The MMUN2214LT1G is suitable for applications requiring amplification and switching of low-power electronic signals. It can be used in audio amplifiers, signal processing circuits, and low-power switching applications.

Detailed and Complete Alternative Models

1. BC547B
2. 2N3904
3. 2SC945

In conclusion, the MMUN2214LT1G is a small signal NPN transistor with high gain and low power consumption, making it suitable for various low-power electronic signal amplification and switching applications.

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