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MUN5241T1G
Product Overview
Category
The MUN5241T1G belongs to the category of NPN Bipolar Power Transistors.
Use
It is commonly used for amplification and switching of electronic signals in various applications.
Characteristics
- High voltage capability
- Low spread of dynamic parameters
- Very high switching speed
- Extremely rugged
- Low collector-emitter saturation voltage
Package
The MUN5241T1G comes in a small SOT-223 package, which offers easy handling and efficient thermal performance.
Essence
This transistor is essential for power management and signal amplification in electronic circuits.
Packaging/Quantity
The MUN5241T1G is typically available in reels with a quantity of 2500 units per reel.
Specifications
- Collector-Emitter Voltage (VCEO): 50V
- Collector Current (IC): 2A
- Power Dissipation (PD): 2.5W
- Transition Frequency (fT): 100MHz
- Operating Temperature Range: -55°C to 150°C
Detailed Pin Configuration
The MUN5241T1G has three pins: 1. Emitter (E) 2. Base (B) 3. Collector (C)
Functional Features
- High voltage capability allows for versatile use in different circuit configurations.
- Low spread of dynamic parameters ensures consistent performance across different units.
- Very high switching speed enables rapid response in switching applications.
Advantages and Disadvantages
Advantages
- Rugged construction for reliable operation in harsh conditions.
- Low collector-emitter saturation voltage minimizes power loss during operation.
Disadvantages
- Limited maximum collector current compared to some alternative models.
- Sensitive to static electricity and mishandling during installation.
Working Principles
The MUN5241T1G operates based on the principles of bipolar junction transistors, utilizing the flow of charge carriers to amplify or switch electronic signals.
Detailed Application Field Plans
The MUN5241T1G is widely used in: - Switching power supplies - Motor control circuits - Audio amplifiers - LED lighting applications
Detailed and Complete Alternative Models
Some alternative models to the MUN5241T1G include: - MUN5111DW1T1G - MUN5211DW1T1G - MUN5311DW1T1G
In conclusion, the MUN5241T1G is a versatile NPN Bipolar Power Transistor with high voltage capability, fast switching speed, and rugged construction, making it suitable for various electronic applications.
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Maglista ng 10 karaniwang tanong at sagot na nauugnay sa aplikasyon ng MUN5241T1G sa mga teknikal na solusyon
What is MUN5241T1G?
- MUN5241T1G is a NPN bipolar junction transistor (BJT) designed for general purpose amplifier and switching applications.
What are the key features of MUN5241T1G?
- The key features include low saturation voltage, high current capability, and high hFE (DC current gain).
What are the typical applications of MUN5241T1G?
- Typical applications include audio amplification, signal amplification, and general purpose switching in electronic circuits.
What is the maximum collector current rating of MUN5241T1G?
- The maximum collector current rating is 100mA.
What is the maximum collector-emitter voltage rating of MUN5241T1G?
- The maximum collector-emitter voltage rating is 40V.
What is the typical hFE (DC current gain) of MUN5241T1G?
- The typical hFE is 100-300 at a collector current of 10mA.
What are the recommended operating conditions for MUN5241T1G?
- The recommended operating conditions include a collector current of 10mA-100mA and a collector-emitter voltage of up to 40V.
Is MUN5241T1G suitable for low-power applications?
- Yes, MUN5241T1G is suitable for low-power applications due to its low saturation voltage and high current capability.
Can MUN5241T1G be used in audio amplifier circuits?
- Yes, MUN5241T1G is commonly used in audio amplifier circuits due to its low saturation voltage and high hFE.
Where can I find detailed technical specifications for MUN5241T1G?
- Detailed technical specifications can be found in the datasheet provided by the manufacturer or distributor of the component.