N57M5114VP2D10TG

Basic Information Overview

• Category: Integrated Circuit (IC)
• Use: Memory module
• Characteristics:
  • High-speed performance
  • Large storage capacity
  • Low power consumption
• Package: DIP (Dual In-line Package)
• Essence: Non-volatile memory storage
• Packaging/Quantity: Individually packaged, typically sold in packs of 10 or 25 units

Specifications

• Model: N57M5114VP2D10TG
• Memory Type: Non-volatile RAM (NVRAM)
• Capacity: 1,024 kilobits (128 kilobytes)
• Interface: Parallel
• Supply Voltage: 3.3V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Minimum 10 years
• Endurance: Minimum 100,000 write cycles

Detailed Pin Configuration

The N57M5114VP2D10TG IC has a total of 28 pins arranged as follows:

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Functional Features

• Non-volatile storage: The N57M5114VP2D10TG retains data even when power is disconnected.
• High-speed operation: Allows for fast read and write access.
• Low power consumption: Optimized for energy efficiency, making it suitable for battery-powered devices.
• Easy integration: Compatible with standard memory interfaces and protocols.
• Error correction: Built-in error detection and correction mechanisms ensure data integrity.

Advantages

• Large storage capacity: Provides ample space for storing data.
• High-speed performance: Enables quick access to stored information.
• Low power consumption: Helps prolong battery life in portable devices.
• Reliable data retention: Ensures long-term storage of critical information.
• Easy integration: Can be seamlessly integrated into existing systems.

Disadvantages

• Limited endurance: The N57M5114VP2D10TG has a finite number of write cycles before it may start to degrade.
• Higher cost: Compared to traditional volatile memory, non-volatile memory modules tend to be more expensive.

Working Principles

The N57M5114VP2D10TG utilizes non-volatile RAM technology, which combines the benefits of both volatile and non-volatile memory. It stores data using a combination of electrically erasable programmable read-only memory (EEPROM) and static random-access memory (SRAM). This allows for fast read and write operations while retaining data even when power is disconnected.

Detailed Application Field Plans

The N57M5114VP2D10TG is commonly used in various applications, including: - Embedded systems - Industrial automation - Automotive electronics - Consumer electronics - Medical devices

Detailed and Complete Alternative Models

• N57M5128VP2D10TG: 2,048 kilobits (256 kilobytes) capacity
• N57M5144VP2D10TG: 4,096 kilobits (512 kilobytes) capacity
• N57M5188VP2D10TG: 8,192 kilobits (1 megabyte) capacity

These alternative models offer increased storage capacity while maintaining similar characteristics and pin configuration.

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