Category: Electronic Component
Use: Signal Amplification
Characteristics: High Gain, Low Noise
Package: SOT-23
Essence: NPN Transistor
Packaging/Quantity: Tape & Reel, 3000 units per reel
The NLV27WZ16DFT2G transistor has the following pin configuration:
1. Base
2. Emitter
3. Collector
Advantages: - High gain amplification capability - Low noise figure for improved signal quality - Compact SOT-23 package for space-constrained designs
Disadvantages: - Limited power handling capacity - Restricted voltage and current ratings
The NLV27WZ16DFT2G transistor is commonly used in electronic devices that require signal amplification, such as audio amplifiers, radio receivers, and communication systems.
The NLV27WZ16DFT2G is an NPN transistor that operates based on the principles of bipolar junction transistors. It amplifies weak input signals by controlling the flow of current between its collector and emitter terminals.
The NLV27WZ16DFT2G transistor finds applications in various fields, including:
Some alternative models to NLV27WZ16DFT2G include:
Q: What is the maximum collector current for NLV27WZ16DFT2G? A: The maximum collector current is 100mA.
Q: What is the noise figure of NLV27WZ16DFT2G? A: The noise figure is 1dB.
Q: What is the power dissipation rating for NLV27WZ16DFT2G? A: The power dissipation rating is 225mW.
Q: Can NLV27WZ16DFT2G be used for high-frequency applications? A: Yes, it has a transition frequency of 250MHz, making it suitable for moderate-frequency applications.
Q: What is the gain-bandwidth product of NLV27WZ16DFT2G? A: The gain-bandwidth product is 400MHz.
This concludes the encyclopedia entry for NLV27WZ16DFT2G.