ON Semiconductor
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NTJD1155LT1G
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NTJD1155LT1G

Product Overview

  • Category: Power MOSFET
  • Use: Switching applications in power supplies, motor control, and other high-current, high-voltage circuits
  • Characteristics: Low on-resistance, high current capability, low gate charge
  • Package: SOT-23-3
  • Essence: N-channel enhancement mode field-effect transistor
  • Packaging/Quantity: Tape and Reel, 3000 units per reel

Specifications

  • Voltage Rating: 30V
  • Current Rating: 8.7A
  • On-Resistance (RDS(on)): 16mΩ
  • Gate Charge (Qg): 9.4nC
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

  1. Source (S)
  2. Gate (G)
  3. Drain (D)

Functional Features

  • Low on-resistance for minimal power dissipation
  • High current capability for efficient power handling
  • Fast switching speed for improved performance in high-frequency applications

Advantages

  • Enhanced efficiency due to low on-resistance
  • Suitable for high-current, high-voltage circuits
  • Compact SOT-23-3 package for space-constrained designs

Disadvantages

  • Limited voltage rating compared to some alternative models
  • Higher gate charge compared to certain alternatives

Working Principles

The NTJD1155LT1G operates as an N-channel enhancement mode field-effect transistor, allowing current to flow between the drain and source terminals when a sufficient voltage is applied to the gate terminal. By controlling the gate voltage, the MOSFET can effectively switch high currents with minimal power loss.

Detailed Application Field Plans

This MOSFET is well-suited for use in various applications, including: - Power supplies - Motor control circuits - DC-DC converters - LED lighting - Battery management systems

Detailed and Complete Alternative Models

  • Alternative Model 1: NTJD1155N
    • Similar specifications and package
    • Lower gate charge
  • Alternative Model 2: NTJD1155P
    • Higher voltage rating
    • Slightly higher on-resistance

In conclusion, the NTJD1155LT1G is a versatile power MOSFET suitable for a wide range of switching applications. Its low on-resistance, high current capability, and compact package make it an attractive choice for designers seeking efficient and reliable power management solutions.

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Maglista ng 10 karaniwang tanong at sagot na nauugnay sa aplikasyon ng NTJD1155LT1G sa mga teknikal na solusyon

  1. What is NTJD1155LT1G?

    • NTJD1155LT1G is a high-performance N-channel MOSFET designed for use in various technical solutions, such as power management and voltage regulation.

  2. What are the key features of NTJD1155LT1G?

    • The key features of NTJD1155LT1G include low on-resistance, high current capability, and a small form factor, making it suitable for compact designs.

  3. How is NTJD1155LT1G typically used in power management applications?

    • NTJD1155LT1G is commonly used in power management applications to efficiently switch and regulate power in electronic devices, helping to improve energy efficiency.

  4. What are the voltage and current ratings of NTJD1155LT1G?

    • NTJD1155LT1G typically has a voltage rating of [insert voltage rating] and a current rating of [insert current rating], making it suitable for a wide range of applications.

  5. Can NTJD1155LT1G be used in automotive applications?

    • Yes, NTJD1155LT1G is often used in automotive applications due to its high performance and reliability, making it suitable for various automotive systems.

  6. Are there any specific thermal considerations when using NTJD1155LT1G?

    • It is important to consider the thermal management of NTJD1155LT1G to ensure proper heat dissipation and prevent overheating in high-power applications.

  7. What are the typical operating conditions for NTJD1155LT1G?

    • NTJD1155LT1G operates within a certain temperature range and voltage range, so it's important to adhere to these specifications for optimal performance.

  8. Can NTJD1155LT1G be used in conjunction with other components for voltage regulation?

    • Yes, NTJD1155LT1G can be integrated into voltage regulation circuits alongside other components to achieve precise and efficient voltage control.

  9. What are the potential benefits of using NTJD1155LT1G in technical solutions?

    • Some potential benefits of using NTJD1155LT1G include improved power efficiency, reduced heat generation, and enhanced overall system performance.

  10. Where can I find detailed technical specifications and application notes for NTJD1155LT1G?

    • Detailed technical specifications and application notes for NTJD1155LT1G can typically be found on the manufacturer's website or in the product datasheet.