The EMH4T2R is a versatile electronic component that belongs to the category of high-frequency transistors. This product is widely used in various electronic applications due to its unique characteristics and functional features.
The EMH4T2R transistor has the following specifications: - Maximum Power Dissipation: 350mW - Collector-Base Voltage: 40V - Collector Current: 100mA - Transition Frequency: 600MHz - Noise Figure: 1dB
The EMH4T2R transistor has three pins: 1. Emitter (E) 2. Base (B) 3. Collector (C)
The EMH4T2R operates based on the principles of bipolar junction transistors. When a small current flows between the base and emitter, it controls a larger current flow between the collector and emitter, enabling signal amplification and processing.
The EMH4T2R transistor finds extensive use in the following application fields: - Radio frequency (RF) amplifiers - Oscillator circuits - Signal mixers - Low-noise preamplifiers
Some alternative models to the EMH4T2R transistor include: - BJT2N2222A - BJTBC547B - BJT2SC3356
In conclusion, the EMH4T2R high-frequency transistor offers exceptional amplification and signal processing capabilities, making it an essential component in various electronic circuits.
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