STGE200N60K

Introduction

STGE200N60K is a power semiconductor device belonging to the category of IGBT (Insulated Gate Bipolar Transistor). This device is widely used in various applications due to its high efficiency, low switching losses, and robustness. In this entry, we will provide an overview of STGE200N60K, including its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

Basic Information Overview

• Category: Power Semiconductor Device
• Use: STGE200N60K is used as a switch in power electronic circuits for applications such as motor drives, renewable energy systems, and industrial automation.
• Characteristics: It exhibits high current-carrying capability, low on-state voltage drop, and fast switching speed.
• Package: The device is typically available in a TO-247 package, which provides good thermal performance and ease of mounting.
• Essence: STGE200N60K is designed to efficiently control high power levels while minimizing losses.
• Packaging/Quantity: It is commonly sold individually or in reels depending on the supplier's packaging options.

Specifications

• Voltage Rating: 600V
• Current Rating: 200A
• Maximum Operating Temperature: 150°C
• Gate-Emitter Voltage (VGE): ±20V
• Collector-Emitter Saturation Voltage: 1.8V at 100A

Detailed Pin Configuration

The STGE200N60K typically has three main pins: 1. Collector (C): Connects to the load or power supply. 2. Emitter (E): Connected to the ground or reference potential. 3. Gate (G): Used to control the switching of the device.

Functional Features

• High Current Capability: Capable of handling high currents, making it suitable for high-power applications.
• Low Switching Losses: Minimizes power dissipation during switching operations, improving overall efficiency.
• Fast Switching Speed: Enables rapid switching transitions, essential for high-frequency applications.

Advantages and Disadvantages

Advantages

• High current-carrying capability
• Low on-state voltage drop
• Fast switching speed
• Robust and reliable operation

Disadvantages

• Higher cost compared to traditional power diodes
• Requires careful consideration of driving and protection circuitry

Working Principles

STGE200N60K operates based on the principles of controlling the flow of current between the collector and emitter terminals using the gate signal. By applying a suitable voltage to the gate terminal, the device can be turned on or off, allowing precise control of power flow in the circuit.

Detailed Application Field Plans

STGE200N60K finds extensive use in various applications, including: - Motor Drives: Controlling the speed and direction of electric motors in industrial and automotive systems. - Renewable Energy Systems: Inverters for solar and wind power generation. - Industrial Automation: Power control and conversion in manufacturing equipment.

Detailed and Complete Alternative Models

Some alternative models to STGE200N60K include: - Infineon IGBT Module - FF200R12KT4 - Mitsubishi Electric IGBT Module - CM200DY-24H - Semikron IGBT Module - SKM200GB123D

In conclusion, STGE200N60K is a versatile power semiconductor device with a wide range of applications, offering high efficiency and robust performance. Its ability to handle high currents and fast switching make it a preferred choice in various power electronics systems.

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