DG453EY-T1-E3

Product Overview

Category: Electronic Component
Use: Switching Device
Characteristics: High-speed, Low-power
Package: SOT-23
Essence: MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor)
Packaging/Quantity: Tape and Reel / 3000 units per reel

Specifications

• Drain-Source Voltage (Vds): 30V
• Continuous Drain Current (Id): 2.5A
• Gate-Source Voltage (Vgs): ±20V
• On-State Resistance (Rds(on)): 60mΩ
• Total Gate Charge (Qg): 4.5nC
• Input Capacitance (Ciss): 1000pF
• Power Dissipation (Pd): 1.25W
• Operating Temperature Range: -55°C to +150°C

Detailed Pin Configuration

The DG453EY-T1-E3 package consists of three pins:

1. Pin 1: Source (S)
2. Pin 2: Gate (G)
3. Pin 3: Drain (D)

Functional Features

• High-speed switching capability
• Low power consumption
• Low on-state resistance
• Excellent thermal performance
• Enhanced ESD protection
• RoHS compliant

Advantages and Disadvantages

Advantages: - Fast switching speed enables efficient operation in high-frequency applications. - Low power consumption results in reduced energy usage and extended battery life. - Low on-state resistance minimizes power losses and enhances overall efficiency. - Excellent thermal performance ensures reliable operation even under demanding conditions. - Enhanced ESD protection safeguards the device from electrostatic discharge damage. - RoHS compliance ensures environmental friendliness.

Disadvantages: - Limited maximum drain-source voltage (30V) restricts its use in high-voltage applications. - Moderate continuous drain current (2.5A) may not be suitable for certain power-intensive applications.

Working Principles

The DG453EY-T1-E3 is a MOSFET, which operates based on the principle of a metal-oxide-semiconductor field-effect transistor. It consists of three terminals: source, gate, and drain. By applying a voltage to the gate terminal, the device controls the flow of current between the source and drain terminals. When the gate voltage exceeds a certain threshold, the MOSFET turns on, allowing current to flow through the channel between the source and drain. Conversely, when the gate voltage drops below the threshold, the MOSFET turns off, interrupting the current flow.

Detailed Application Field Plans

The DG453EY-T1-E3 finds application in various fields, including:

1. Power Management Systems
2. Battery Charging Circuits
3. DC-DC Converters
4. Motor Control Systems
5. LED Lighting Applications
6. Portable Electronic Devices

Detailed and Complete Alternative Models

1. DG454EY-T1-E3
2. DG455EY-T1-E3
3. DG456EY-T1-E3
4. DG457EY-T1-E3
5. DG458EY-T1-E3

These alternative models offer similar specifications and functionality to the DG453EY-T1-E3, providing flexibility in design and compatibility with different system requirements.

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