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IRFZ34PBF
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IRFZ34PBF

Product Overview

Category

The IRFZ34PBF belongs to the category of power MOSFETs.

Use

It is commonly used as a switching device in various electronic circuits and applications.

Characteristics

  • High voltage capability
  • Low on-resistance
  • Fast switching speed
  • Suitable for high current applications

Package

The IRFZ34PBF is typically available in a TO-220AB package.

Essence

This MOSFET is essential for controlling high-power loads in electronic circuits.

Packaging/Quantity

It is usually sold in reels or tubes containing multiple units, with quantities varying based on supplier and customer requirements.

Specifications

  • Drain-Source Voltage (VDS): 60V
  • Continuous Drain Current (ID): 30A
  • RDS(ON) (Max) @ VGS = 10V: 0.044Ω
  • Gate-Source Voltage (VGS) (Max): ±20V
  • Total Power Dissipation (PD): 2.5W

Detailed Pin Configuration

The IRFZ34PBF has three pins: 1. Gate (G): Used to control the flow of current between the source and drain. 2. Drain (D): Connects to the positive side of the load. 3. Source (S): Connects to the ground or negative side of the load.

Functional Features

  • High input impedance
  • Low output impedance
  • Excellent thermal stability
  • Enhanced ruggedness and reliability

Advantages and Disadvantages

Advantages

  • Low on-resistance leads to minimal power loss
  • Fast switching speed allows for efficient operation
  • High voltage capability enables use in diverse applications

Disadvantages

  • Sensitivity to static electricity and overvoltage events
  • Requires careful handling to prevent damage during installation

Working Principles

The IRFZ34PBF operates based on the principles of field-effect transistors, where the gate voltage controls the flow of current between the source and drain terminals. When a suitable voltage is applied to the gate, the MOSFET allows current to pass through, effectively acting as a switch.

Detailed Application Field Plans

The IRFZ34PBF finds extensive use in various applications, including: - Switching power supplies - Motor control circuits - LED lighting systems - Audio amplifiers - DC-DC converters - Battery management systems

Detailed and Complete Alternative Models

Some alternative models to the IRFZ34PBF include: - IRFZ44N - IRF3205 - IRF540N - IRLB8721

In conclusion, the IRFZ34PBF power MOSFET offers high performance and versatility, making it a popular choice for a wide range of electronic applications.

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Maglista ng 10 karaniwang tanong at sagot na nauugnay sa aplikasyon ng IRFZ34PBF sa mga teknikal na solusyon

  1. What is the maximum drain-source voltage (Vds) of IRFZ34PBF?

    • The maximum drain-source voltage (Vds) of IRFZ34PBF is 55 volts.

  2. What is the continuous drain current (Id) of IRFZ34PBF?

    • The continuous drain current (Id) of IRFZ34PBF is 30 amperes.

  3. What is the on-state resistance (Rds(on)) of IRFZ34PBF?

    • The on-state resistance (Rds(on)) of IRFZ34PBF is typically 0.044 ohms.

  4. What is the gate-source voltage (Vgs) required to turn on IRFZ34PBF?

    • The gate-source voltage (Vgs) required to turn on IRFZ34PBF is typically 10 volts.

  5. Can IRFZ34PBF be used for switching applications?

    • Yes, IRFZ34PBF is commonly used for switching applications due to its high current and voltage ratings.

  6. What are the typical applications of IRFZ34PBF?

    • IRFZ34PBF is often used in power supplies, motor control, and other high-current switching applications.

  7. Does IRFZ34PBF require a heat sink for high-power applications?

    • Yes, for high-power applications, it is recommended to use a heat sink to dissipate heat effectively.

  8. What is the operating temperature range of IRFZ34PBF?

    • IRFZ34PBF has an operating temperature range of -55°C to 175°C.

  9. Is IRFZ34PBF suitable for automotive applications?

    • Yes, IRFZ34PBF is suitable for automotive applications due to its rugged construction and high current capability.

  10. Can IRFZ34PBF be used in parallel to increase current handling capacity?

    • Yes, IRFZ34PBF can be used in parallel to increase the overall current handling capacity in a circuit. However, proper attention should be given to ensure balanced current sharing among the devices.